Canon Kabushiki Kaisha

Stanley Electric Co., Ltd

Toshio Tomiyoshi

Kazutoshi Torashima

Takahiro Akiyama

Tsuyoshi Maruyama

Ken Sasakura

Keizo Kawaguchi

Kazuhisa Ishii

Shotaro Tomita

Takahisa Kato

Atsushi Kandori

Motokazu Kobayashi

Minako Nakasu

Takahiro Hachisu

Yoshinori Tateishi

Youichi Fukaya

Ayako Furesawa

Hiroto Numazawa

A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconductor devices. The bonded substrate includes functional element regions and a scribe region in a plan view. The singulating includes forming a groove in the scribe region, and cutting the bonded substrate in a region outside an inner side surface of the groove. The groove is formed penetrating one of the first substrate and the second substrate, the interconnection structure layer, and the first and second bonding layers. The groove extends from the one of the first substrate and the second substrate to a position deeper than all interconnection layers provided between the first and second substrates.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor apparatus includes a translucent sheet and a semiconductor device that includes an effective pixel area and a peripheral area. A first bonding member is disposed between the peripheral area and the translucent sheet. A second bonding member is disposed between the effective pixel area and the translucent sheet. The first bonding member and the second bonding member are in contact with each other via a first interface. The second bonding member is made of a resin. The second bonding member includes a first part, and a second part disposed between the first part and the first bonding member and in contact with the first bonding member via the first interface. A cure ratio of the second part is lower than a cure ratio of the first part.

Semiconductor apparatus, display apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, moving object, and manufacturing method for semiconductor apparatus

A method of producing an electromechanical transducer includes forming an insulating film on a first electrode, forming a sacrificial layer on the insulating film, forming a first membrane on the sacrificial layer, forming a second electrode on the first membrane, forming an etching-hole in the first membrane and removing the sacrificial layer through the etching-hole, and forming a second membrane on the second electrode, and sealing the etching-hole. Forming the second membrane and sealing the etching-hole are performed in one operation.

Electromechanical transducer and method of producing the same

A piezoelectric actuator has a ground substrate layer, an intermediate layer containing at least one of Ti and TiOon the ground substrate layer, an electrode layer containing Pt on the intermediate layer, and a piezoelectric layer containing lead zirconate titanate on the electrode layer, in which the lead zirconate titanate contained in the piezoelectric layer is preferentially oriented in the (100), (001), or (110) direction, the Pt contained in the electrode layer is preferentially oriented in the (111) direction, and the half width of the rocking curve in the (111) plane of the Pt contained in the electrode layer in X-ray diffraction is 1&#xb0; or more.

Piezoelectric actuator, method for manufacturing same, and liquid discharge head

An electromechanical transducer includes a first electrode; a silicon oxide film disposed on the first electrode; and a vibration film including a silicon nitride film disposed on the silicon oxide film with a space therebetween and a second electrode disposed on the silicon nitride film so as to oppose the first electrode.

An electromechanical transducer includes a substrate, a first electrode disposed on the substrate, and a vibration film including a membrane disposed on the first electrode with a space therebetween and a second electrode disposed on the membrane so as to oppose the first electrode. The first electrode has a surface roughness value of 6 nm RMS or less.

A method of manufacturing oscillator devices each having an oscillator and a resilient supporting member for supporting the oscillator for oscillatory motion, includes a step of processing one and the same substrate to form oscillators and resilient supporting members of oscillator devices so that oscillators of adjacent oscillator devices are connected to each other, a step of forming or placing a magnetic material so that it extends across the connected oscillators of the adjacent oscillator devices, and a step of simultaneously cutting and separating the connected oscillators and the magnetic material formed or placed to extend across the connected oscillators, whereby oscillator devices, such as oscillatory type actuators having good reliability and performance evenness can be manufactured with high productivity.

Method of manufacturing oscillator device

The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers

The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.

Growing community of inventors

Yokohama, Japan

Toshio Tomiyoshi