Tokyo Electron Limited

Toshio Takagi

Tsuyoshi Takahashi

Mitsuhiro Okada

Hideaki Yamasaki

Takeshi Sakuma

Takanobu Hotta

Yicheng Li

Yasushi Fujii

Yu Nunoshige

Takashi Kamio

Tetsuya Saitou

Takashi Kakegawa

Masaki Sano

Takuya Kawaguchi

Hirotaka Kuwada

Shinji Kawasaki

Tomohiro Oota

Yuji Kato

A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

Showerhead and substrate processing apparatus

A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.

Substrate processing method and substrate processing apparatus

A film forming apparatus includes a mounting table mounting a substrate thereon, a gas diffusion unit above the mounting table, gas dispersion units above the gas diffusion unit, and an evacuation unit to evacuate a processing chamber. The gas diffusion unit has gas injection holes for injecting a gas in a shower shape. Outermost gas injection holes are arranged outward of an outer circumference of the substrate when seen from the top. The gas dispersion units face the gas diffusion unit through a diffusion space therebetween. Each of the gas dispersion units has gas discharge holes formed along a circumferential direction thereof to disperse a gas horizontally into the diffusion space. The gas dispersion units include at least three first gas dispersion units along a first circle, and at least three second gas dispersion units along a second circle concentrically disposed at an outer side of the first circle.

Film forming apparatus

A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

A film forming apparatus includes a processing chamber, and a mounting table disposed in the processing chamber to mount a substrate thereon. The film forming apparatus further includes a gas shower head having gas supply holes and including a central region facing a central portion of the substrate and a peripheral region facing a peripheral portion of the substrate, a first processing gas supply unit for supplying a first processing gas to the central region, a second processing gas supply unit for supplying a second processing gas to the central region, an energy supply unit for supplying energy to react the first processing gas with the second processing gas on the substrate, and a purge gas supply unit for supplying a purge gas to the central region and the peripheral region when one of the first and the second processing gas is switched by the other.

Film forming apparatus, film forming method and storage medium

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

Film deposition apparatus and film deposition method

A shower head structure disposed in a devicefor processing a semiconductor while supplying processing gas to a processing space S for storing a heated processed substrate W, comprising a shower headhaving a plurality of gas injection holesB for supplying the processing gas and a light introducing rodof a radiation thermometerinserted into at least one of the gas injection holesB.

Shower head structure for processing semiconductor

A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.

Growing community of inventors

Nirasaki, Japan

Toshio Takagi