Kabushiki Kaisha Toshiba

Toshio Sudo

Chiaki Takubo

Kazutaka Saito

Kenji Ito

Atsuko Iida

Takeshi Miyagi

Tamio Saito

Kunio Yoshihara

Shigeyuki Oe

According to this invention, there is provided a multilevel wiring substrate comprising, a base substrate having first and second surface and including first and second areas, said first area including first and second level conductive layers insulated from each other, a plurality of first vertical conductive layers electrically connected to said first level conductive layer so as to provide first end portions exposed to said first surface, and a plurality of second vertical conductive layers electrically connected to said second level conductive layer so as to provide second end portions exposed to said first surface, said first and second end portions being alternately arranged in row and column directions, and said second area including third and fourth conductive layers.

Arrangement having multilevel wiring structure used for electronic

A semiconductor integrated circuit device comprising a plurality of semiconductor packaging substrates arranged parallel to one another, a plurality of semiconductor integrated circuits mounted on each of the semiconductor packaging substrates, a circuit for electrically connecting the semiconductor integrated circuits, an optical signal transmitting circuit, electrically connected to the semiconductor integrated circuits, for converting an electric signal input by the semiconductor integrated circuits to an optical signal and outputting it to another semiconductor packaging substrate, and an optical signal receiving circuit, electrically connected to the semiconductor integrated circuits, for receiving the optical signal output from the semiconductor packaging substrate, converting the optical signal to an electric signal, and outputting the electric signal to the semiconductor integrated circuits.

Semiconductor integrated circuit device with optical transmit-receive

A tape-automated bonding substrate or TAB substrate used for mounting a gallium arsenide IC chip having external connection terminals including signal input and output terminals thereon is shown. Conductive thin-film wiring lines are formed on an insulative thin-film layer. These thin-film wiring lines include feed-through type signal input wiring lines to be connected to the input terminals of the chip. Each feed-through type signal input wiring line has an inner lead to which a corresponding signal input terminal of the chip is directly connected, a terminal pad for receiving a high-speed input signal, and a terminal pad to which an impedance-matching resistor is to be connected. The feed-through type signal input wiring lines have a composite line structure of micro-strip signal transmission and co-planar signal transmission line structures.

IC package for high-speed semiconductor integrated circuit device

A semiconductor integrated circuit device including first and second transmission leads formed on both sides of a resin film on which a semiconductor integrated circuit chip is mounted. These leads are connected at portions immediately close to the high-speed input terminals of the chip by through-hole leads. This chip-to-lead configuration according to the present invention is significantly effective for a GaAs logic integrated circuit or the like that processes high-speed input signals.

Semiconductor integrated circuit apparatus

There is disclosed a mounting structure for a semiconductor integrated circuit device or IC device having signal transmission terminals, which has an insulative substrate on which the IC device is mounted, a conductive signal transmission wiring line formed on the substrate and electrically connected to a selected one of the signal transmission terminals of the IC device, and an insulative resin layer formed on the substrate to at least partially cover the signal transmission wiring line. The insulative resin layer functions to change and set the impedance of the signal transmission wiring line to a desired impedance value. The insulative resin layer is formed to have a selected thickness such that the characteristic impedance of the wiring line, which tends to fluctuate in the wiring line etching formation process, can be adjusted and set towards a destination characteristic impedance.

IC packing device with impedance adjusting insulative layer

The semiconductor integrated circuit device of high speed operation can be obtained by adopting the feed-through termination system and by making the wiring pattern in that case as being of construction folded in the direction of thickness of the supporting circuit substrate, without increasing the housing density of the outer lead. In addition, since matching resistor is mounted on the external wall of the substrate, the manufacturing process is also simple without the making the outside dimensions of the substrate large.

Semiconductor integrated circuit device particularly for high speed

A semiconductor integrated circuit device has a package base and a cavity formed with a ground electrode layer thereon. A semiconductor integrated circuit chip is providing on the ground electrode layer. De-coupling capacitors are providing on the surface of the cavity. A ground metal plate and outer leads are formed on the surface of the bottom of the package base. A metal connector is providing through the package base to connect electrically and thermally, the ground electode layer and the ground metal plate.

Semiconductor integrated circuit device

A circuit board comprises a substrate made of a semi-insulating or insulating material, an insulating layer formed on the substrate and having a lower dielectric constant than the dielectric constant of the substrate, and a plurality of wiring conductors formed at predetermined intervals on the insulating layer. The insulating layer has a thickness determined according to the distance between adjacent wiring conductors and equal to 0.5 to 2.5 times the distance noted above, for the purpose of reducing cross-talk noise.

Growing community of inventors

Kawasaki, Japan

Toshio Sudo