Shin-etsu Chemical Co., Ltd.

Nippon Kayaku Kabushiki Kaisha

Other

Mitsubishi Denki Kabushiki Kaisha

Shin-estu Chemical Co., Ltd.

Ciba-geigy Corporation

Nippondenso Co., Ltd.

Osram Opto Semiconductors Gmbh

Philips Lumileds Lighting Company LLC

Niigata University

Hokko Chemical Industry Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Shin-etsu Chemical Ltd., Co.

Toshio Shiobara

Tsutomu Kashiwagi

Kazutoshi Tomiyoshi

Takayuki Aoki

Eiichi Asano

Hisashi Shimizu

Miyuki Wakao

Hideki Akiba

Kazuaki Sumita

Koji Futatsumori

Shoichi Osada

Kazuhiro Arai

Nobuhiro Ichiroku

Shigeki Ino

Susumu Sekiguchi

Masachika Yoshino

Yusuke Taguchi

Tsuyoshi Honda

Kunio Itoh

Yoshihira Hamamoto

Yoshihiro Kawada

Junichi Sawada

Takaaki Fukumoto

Yoshihiro Tsutsumi

Yasuhiko Sato

Takayuki Kusunoki

Hidenori Mizushima

Shouhei Kozakai

Akio Suzuki

Hideto Kato

Takeshi Fukuda

Takaaki Shimizu

Nobukazu Suzuki

Satoshi Kuwata

Takeo Yoshida

Motoo Fukushima

Jörg Erich Sorg

Shinji Abe

Hiroshi Inomata

Yasuo Tarumi

Hiroshige Okinoshima

Hiromasa Yamaguchi

Shinji Makikawa

Joerg Sorg

Syuuichi Azechi

Harald Jäger

Tomoaki Nakamura

Takashi Tsuchiya

Yasuo Kimura

Hajime Itokawa

Kimitaka Kumagae

Noriaki Higuchi

Manabu Narumi

Tatsuya Kanamaru

Ryunosuke Nomura

Satoshi Okuse

Naofusa Miyagawa

Chie Sasaki

Kinya Kodama

Shinsuke Yamaguchi

Minoru Takei

Saiko Akahane

Shingo Ando

Haruyoshi Kuwabara

Masayuki Umeno

Manabu Ueno

Tadaharu Ikeda

Hiroyuki Takenaka

Naosuke Taniguchi

Tarou Shimoda

Hayato Tanaka

Tatsuya Ishizaki

Kenji Ohashi

Wataru Goto

Katsuyuki Imazawa

Shinichi Jingu

Hatsuji Shiraishi

Masataka Nakanishi

Peter Flury

Akira Shintai

Masanobu Sato

Hiroyuki Iguchi

Masatoshi Takita

Harald Jaeger

Hiroshi Shibata

Koji Tsuchiya

Norio Tsubokawa

Kenichi Kuboki

Wolfgang Scharf

Seizi Katayama

Yoshio Fujimura

Kaoru Katoh

Koki Matsumoto

Nicolaas Joseph Martin Van Leth

Kunio Ito

Toshiyuki Sutou

Akitoshi Komiya

Yasumasa Morita

Tokue Kojima

Hironori Sakamoto

Provided is a cured or uncured electromagnetic wave shielding sheet with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm being impregnated with a resin and/or with the resin being laminated thereon, the sheet exhibiting a superior electromagnetic wave shielding performance with respect to millimeter waves and terahertz waves. The sheet may for example be one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin and/or with the resin being laminated thereon; or one with a carbon nanotube unwoven cloth having a thickness of not larger than 1 mm, an air permeability of not larger than 0.5 cm/cm·s and a specific resistance of not larger than 0.005 Ω·cm being impregnated with a resin.

Electromagnetic wave shielding sheet

A method for manufacturing a low dielectric silica powder incudes heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHz, and etching a surface of the heat-treated silica powder with an etching solution. A silica powder with an extremely small dielectric loss tangent, a resin composition containing the same, and a method for manufacturing a silica powder with a low dielectric loss tangent and strong adhesion at the interface to resin are achieved.

Low dielectric silica powder, resin composition containing the silica powder, and method for manufacturing low dielectric silica powder

A method for packing quartz glass cloth includes the step of packing quartz glass cloth that is at least 99.5 wt % comprised of SiOwith packaging film to form a package, wherein the package has a volumetric absolute humidity therein of 10.0 g/mor less.

Method for packing quartz glass cloth

The present invention is a low dielectric silica powder, which has an average particle size of 0.1 to 30 μm and a dielectric loss tangent of 0.0005 or less at 10 GHz. An object is to provide: a silica powder with an extremely small dielectric loss tangent; a resin composition containing the same; and a method for manufacturing a silica powder with a low dielectric loss tangent and strong adhesion at the interface to resin.

A low dielectric substrate for high-speed millimeter-wave communication includes a quartz glass cloth with a dielectric loss tangent of 0.0001 to 0.0015 and a dielectric constant of 3.0 to 3.8 at 10 GHz, and an organic resin with a dielectric loss tangent within 80% to 150% of the dielectric loss tangent of the quartz glass cloth at 10 GHz and a dielectric constant within 50% to 110% of the dielectric constant of the quartz glass cloth at 10 GHz. This provides a low dielectric substrate for high-speed millimeter-wave communication where the low dielectric substrate makes it possible to send signals that are stable and have excellent quality with no difference in propagation time between wirings even if the substrate has an uneven resin distribution and the quartz glass cloth above and below the wirings, and the difference in dielectric loss tangent between members has been reduced to lower transmission loss.

Low dielectric substrate for high-speed millimeter-wave communication

The present invention is a resin substrate including an organic resin and a quartz glass cloth, where the organic resin has a dielectric loss tangent of 0.0002 to 0.0020 measured at 10 GHz and a 40 GHz/10 GHz ratio is 0.4 to 0.9, the quartz glass cloth has a dielectric loss tangent of 0.0001 to 0.0015 measured at 10 GHz and a 40 GHz/10 GHz ratio is 1.2 to 2.0, and the resin substrate has a dielectric loss tangent of 0.0001 to 0.0020 at 10 GHz and a 40 GHz/10 GHz ratio is 0.8 to 1.2. This provides a resin substrate having a low dielectric loss tangent in a high-frequency region and dielectric characteristics with little frequency dependence.

Resin substrate having dielectric characteristics with little frequency dependence

The present invention is a low dielectric resin substrate, which is a composite including an annealed quartz glass cloth and an organic resin, where the annealed quartz glass cloth has a dielectric loss tangent of less than 0.0010 at 10 GHz, and tensile strength of 1.0 N/25 mm or more per cloth weight (g/m). This provides a resin substrate that includes a quartz glass cloth which has a low dielectric loss tangent and which is also excellent in tensile strength.

Low dielectric resin substrate

An adhesive substrate includes a support base member and an adhesive layer provided on the support base member. The support base member contains electroconductive particles and an insulating resin, and has a recessed and projected pattern with two or more projected portions on one surface or both surfaces of the support base member. The adhesive layer is provided at least on upper surfaces of the projected portions in the recessed and projected pattern of the support base member. The adhesive layer on the upper surfaces of the projected portions has an upper surface with a curved surface. Thus, the present invention provides an adhesive substrate capable of selectively picking up and quickly transferring large amounts of fine chips and particles, a method for producing the adhesive substrate, and a transfer device.

Adhesive substrate, transfer device having adhesive substrate, and method for producing adhesive substrate

A concentrating solar cell module including; a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes; a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; the solar cells mounted on the mounting regions; and a condensing lens molded above the mounting regions so as to encapsulate the solar cells, wherein a surface of the mounting regions of the base portion is plated, the condensing lens is molded with a transparent thermosetting silicone resin, and the support is joined to a surface of the base portion, the surface to which the support is joined is on the same side of the base portion as the surface on which the solar cells are mounted.

Concentrating solar cell module

The present invention provides the substrate comprises a fiber film base material comprising a sheet of a surface-treated fiber film or a plural number of sheets of the surface-treated fiber films being laminated, wherein the surface-treated fiber film has a value of a conventional flexural rigidity measured by a method according to JIS R 3420 of 3-fold to 100-fold to a value of a conventional flexural rigidity of an untreated fiber film. There can be provided a substrate having a uniform and homogeneous insulating layer which does not generate unfastening or twisting of a fiber, and in addition to heat resistance, dimensional stability and impact resistance, having further excellent in bendability and flexibility.

Substrate and semiconductor apparatus

The present invention provides a surface-modified glass fiber film having its surface modified by a silicon-containing compound, and a value of a common flexural rigidity of the surface-modified glass fiber film as measured by the method described in JIS R 3420 is in the range of 3 to 100 times as compared to a value of the common flexural rigidity of an unmodified glass fiber film. There can be provided a surface-modified glass fiber film having a high strength, a high heat resistance, a good dimensional stability, a good self-supporting property, a low average linear expansion coefficient, a high storage rigidity at high temperature, and an excellent surface uniformity.

Surface-modified glass fiber film

A silicone-modified epoxy resin composition that offers a cured product excellent in low permeability to gas, mechanical strength, and heat resistance and transparency and further offers an optical semiconductor sealing material excellent in heat cycle resistance, and a cured epoxy resin product obtained by curing the composition. The epoxy resin composition comprises the following components (A) to (C):

Epoxy resin containing silicone-modified epoxy resin and polyvalent carboxylic acid compound, and cured product thereof

A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient &#x3b1;of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient &#x3b1;of a cured product of the encapsulating resin layer, and a linear expansion coefficient &#x3b1;of the base satisfy both of the following formula (1) and (2);&#x3b1;&#x3c;&#x3b1;&#x3c;&#x3b1;&#x2003;&#x2003;(1)&#x2212;2&#x3c;&#x3b1;+&#x3b1;&#x2212;2&#x3b1;&#x3c;2&#x2003;&#x2003;(2)wherein the unit of the linear expansion coefficient is ppm/K. The base-attached encapsulant for semiconductor encapsulation which suppress package warpage even if a package with a large area is encapsulated.

Base-attached encapsulant for semiconductor encapsulation, semiconductor apparatus

Method for manufacturing semiconductor apparatus using a base-attached encapsulant

Growing community of inventors

Annaka, Japan

Toshio Shiobara