Hitachi, Ltd.

Other

Renesas Technology Corp.

National Institute of Advanced Industrial Science and Technology

Hitachi Chemical Company, Ltd.

Micromachine Center

Toshio Sakamizu

Hiroshi Shiraishi

Takashi Hattori

Fumio Murai

Tadashi Arai

Norio Hasegawa

Hiroshi Fukuda

Nobuaki Hayashi

Koji Kato

Takashi Soga

Michiaki Hashimoto

Hidenori Yamaguchi

Yoshiyuki Yokoyama

Sonoko Migitaka

Hironao Okada

Masao Arakawa

Toshihiro Itoh

Masahiro Hashimoto

A sensor network system is provided with a plurality of sensor terminals disposed in a predetermined area, and a monitoring center device that collects sensing data wirelessly transmitted from each of the plurality of sensor terminals. The sensor terminals wirelessly and intermittently transmit a transmission signal including sensor identification information and the latest sensing data from the sensors. The monitoring center device has the function of acquiring positional information of the sensor terminals in the predetermined area, and accumulates each item of the sensing data from the sensor terminals as time-series data in association with information about the time of acquisition. On the basis of the positional information of the sensor terminals and the time-series data of the accumulated sensing data, a time-series variation of an environmental element in the predetermined area is visually presented. The sensor network system enables monitoring of detailed environmental changes corresponding to differences in position.

Sensor network system

There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.

Method for producing electronic device

Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist patternefficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate. The resist patterncomprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.

Photo mask

A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by:

Photosensitive resin composition and method of forming resist images

A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.

High-resolution lithography and semiconductor device manufacturing method

In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.

Pattern forming method

Growing community of inventors

Tokyo, Japan

Toshio Sakamizu