Other

Toshio Onodera

Keisuke Nakazawa

Chiaki Hatsuta

Norihito Ito

Naoya Hayashi

Toshiaki Motonaga

Toru Ogawa

Takahiro Matsuo

Hiroshi Mohri

Junji Fujikawa

In a halftone phase shifting photomask , having a pattern of halftone phase shifting film containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250&deg; C. and 500&deg; C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.

Halftone phase shifting photomask and blanks for halftone phase shifting photomask therefor and a method for forming pattern by using the halftone phase shifting photomask

The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask comprising a pattern of halftone phase shift film containing at least chromium and fluorine on a transparent substrate , wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light having a wavelength substantially absorbed by halftone phase shift film

Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this

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Fujisawa, Japan

Toshio Onodera