Hitachi Ulsi Systems Co., Ltd.

Other

Renesas Technology Corp.

Hitachi, Ltd.

Toshio Nozoe

Shuji Ikeda

Hideo Miura

Norio Suzuki

Yasuko Yoshida

Hirohiko Yamamoto

Akira Takamatsu

Kazushi Fukuda

Shinichi Horibe

Hirofumi Shimizu

Masamichi Kobayashi

Yasushi Matsuda

Norio Ishitsuka

A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the same

A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the sme

A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp&lt;Tr.ltoreq.3Tp)

Method of manufacturing a semiconductor integrated circuit device

Growing community of inventors

Higashiyamato, Japan

Toshio Nozoe