Renesas Electronics Corporation

Renesas Technology Corp.

Toshio Nagasawa

Ryotaro Kudo

Koji Tateno

Kyoichi Hosokawa

Shin Chiba

Nobuyoshi Matsuura

Tomoaki Uno

Masaki Shiraishi

Koji Saikusa

Yoshitaka Onaya

Hiroshi Murakami

Takuya Makise

Tetsuo Ichino

Shigeru Kurita

Mitsuharu Hitani

Akihiro Tamura

A power-supply apparatus according to an aspect includes an inductor, a transistor that supplies, in an on-state, a current to the input side of the inductor, a second transistor that becomes, when the first transistor is in an off-state, an on-state and thereby brings the input side of the inductor to a predetermined potential, a signal generation unit that generates voltage signals corresponding to a current flowing to the inductor, an amplifier that outputs a current according to the voltage signals, a converter that converts the current output from the amplifier into a voltage signal, and a control unit that controls the transistors based on a first feedback signal corresponding to the voltage on the output side of the inductor and the voltage signal, which is used as a second feedback signal.

Power-supply apparatus having a high-side transistor and a low-side transistor

In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Switching power supply device and a semiconductor integrated circuit

Provided is a controller that is capable of reducing fall in a waveform of a power supply voltage when the power supply voltage supplied to a CPU is reduced. A controller for controlling voltage regulators includes a differential amplifier that outputs a measurement voltage corresponding to a power supply voltage supplied to a load and an error amplifier having a non-inverting input terminal supplied with a target voltage and an inverting input terminal supplied with a measurement voltage. The error amplifier compares the target voltage and the measurement voltage and outputs a signal for controlling the voltage regulators. Further included in the controller is a correction circuit that applies an offset voltage to the inverting input terminal of the error amplifier when the power supply voltage supplied to the load is reduced.

Voltage regulator controller and system including voltage regulator controller

Power-supply apparatus

A multi-phase power source device capable of easily changing the number of phases is realized. For example, a plurality of drive units POL[]-POL[] corresponding to the number of phases are provided, wherein each POL[n] receives a phase input signal PHI[n] serving as a pulse signal, and generates a phase output signal PHO[n] by delaying PHI[n] by a predetermined cycles of a clock signal CLK. PHI[n] and PHO[n] of each POL[n] are coupled in a ring, wherein each POL[n] performs a switching operation with PHI[n] or PHO[n] as a starting point. In this case, each POL[n] charges and discharges a capacitor Cct commonly coupled to each POL[n] with an equal current, and a frequency of CLK is determined based on this charge and discharge rate. That is, if the number of phases increases n times, the frequency of CLK will be automatically controlled to n times.

Semiconductor device and power source device

A non-insulated DC-DC converter has a power MOS&#x2022;FET for a highside switch and a power MOS&#x2022;FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS&#x2022;FET for the highside switch and the power MOS&#x2022;FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS&#x2022;FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.

Semiconductor device

In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

A non-insulated DC-DC converter has a power MOS-FET for a highside switch and a power MOS-FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS-FET for the highside switch and the power MOS-FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS-FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.

A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.

Switching power supply device, semiconductor integrated circuit device and power supply device

The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Switching power supply device and semiconductor integrated circuit

To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.

Power supply unit

The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element Meven when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Growing community of inventors

Tokyo, Japan

Toshio Nagasawa