Albert Einstein College of Medicine

Renesas Technology Corp.

Nippon Steel Sumitomo Metal Corporation

Nippon Steel Corporation

Toshio Mochizuki

Stefan Somlo

Takanobu Ambo

Tomohiko Omura

Eiki Imaizumi

Yusaku Tomio

Hideki Takabe

Sachiko Okumura

A martensitic Cr-containing steel having excellent corrosion resistance, SSC resistance, and IGHIC resistance is provided. A martensitic Cr-containing steel according to the present invention includes: a chemical composition consisting of, by mass %, Si: 0.05 to 1.0%, Mn: 0.1 to 1.0%, Cr: 8 to 12%, V: 0.01 to 1.0%, sol. Al: 0.005 to 0.10%, with the balance being Fe and impurities, wherein an effective Cr amount defined by 'Cr&#x2212;16.6&#xd7;C' is not less than 8%, and an Mo equivalent defined by 'Mo+0.5&#xd7;W' is 0.03 to 2%; a micro-structure wherein a grain size number of prior-austenite crystal grain is not less than 8.0; and a yield strength of less than 379 to 551 MPa, wherein a grain-boundary segregation ratio of Mo and W is not less than 1.5.

Martensitic Cr-containing steel and oil country tubular goods

The pipe end correction method for correcting an inner diameter of pipe end of a seamless pipe made of a high Cr stainless steel containing 8 to 35 mass % Cr, and 0.1 to 10 mass % Ni includes a pipe end correction step following hot tube-making and heat treatment, that forces a plug into the inside of pipe end portion for inner diameter correction so as to expand the pipe end portion while oxide scale, which is generated during tube-making or heat treatment, remains accumulated on an inner surface of the pipe end portion. A lubricant film forming step, prior to the pipe end correction step, applies lubricant at least either on the inner surface of the pipe end portion of the seamless pipe or on a surface of the plug. Seizure flaws can be prevented on the inner surface of the pipe end portion of the high Cr stainless steel.

Pipe end correction method of seamless pipe made of high CR stainless steel

Disclosed herein is a semiconductor integrated circuit device such as a for-camera preprocessing LSI suitable for a semiconductor integrated circuit and having improved responsiveness. In a D/A converter circuit for generating a feedback signal for compensating for black level variation in a for-camera preprocessing LSI, first-conductivity-type MOSFETs as first current sources produce currents corresponding to digital signals. The digital signals are supplied to first-conductivity-type first differential MOSFETs and second-conductivity-type second differential MOSFETs, with the gates and drains of the first differential MOSFETs and the gates and drains of the second differential MOSFETs being connected together respectively. There is provided a differential amplifier circuit in which a bias voltage is supplied to a noninverting input terminal thereof and an inverting input terminal thereof is connected to an analog current output node which is the drains connected together of one sides of the first differential MOSFETs, and a resistive element is provided between the inverting input terminal and an output terminal thereof. A converted analog output voltage is generated at the output terminal, and a voltage equal to the bias voltage is supplied to drains of the other sides of the first differential MOSFETs.

Semiconductor integrated circuit device

The present invention provides a purified and isolated wild type PKD2 gene, as well as mutated forms of this gene. The present invention also provides one or more single-stranded nucleic acid probes which specifically hybridize to the wild type PKD2 gene or the mutated PKD2 gene, and mixtures thereof, which may be formulated in kits, and used in the diagnosis of ADPKD associated with the mutated PKD2 gene. The present invention also provides a method for diagnosing ADPKD caused by a mutated PKD2 gene, as well as a method for treating autosomal dominant polycystic kidney disease caused by a mutated PKD2 gene.

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The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors. The output part has a third bipolar transistor having a base to which the output of the differential amplifier is applied, a fourth resistor connected in series with the third bipolar transistor, a current mirror circuit for transferring current flowing in the third bipolar transistor, and a fifth resistor and a diode for converting the transferred current to voltage.

Growing community of inventors

Tokyo, Japan

Toshio Mochizuki