Hitachi, Ltd.

Renesas Technology Corp.

Toshio Miyatake

Ryuji Kohno

Tatsuya Nagata

Hiroya Shimizu

Hideo Miura

Yoshishige Endo

Masatoshi Kanamaru

Hideyuki Aoki

Naoto Ban

Yuji Wada

Atsushi Hosogane

Masaaki Namba

Takanorr Aono

Juichi Enyama

A generator and a method of manufacturing the generator, which can suppress a lowering of tension of a bind ring caused by an initial deformation during assembly and changes with the lapse of time during long-term operation, and can prevent a lowering of the support function. The generator includes a coil assembled in a groove formed in an iron core of a rotor and a bind ring for fixing a coil end of the coil, which is projected outward of the iron core, to a coil support. A restraint member is disposed on at least one of opposite axial ends of the bind ring to restrain the relevant end from deforming.

Generator and method of manufacturing same

A probe structure is provided in which secondary electrodes of a main base material and probes are formed can be electrically connected to electrodes in a substrate side even when a lot of probes are formed in a large area, so that a lot of LSIs within a wafer can be tested in one lot in a wafer test process, and an efficiency of the test process can be improved. In the probe structure, an interposer constituted by a high rigid material is arranged between the main base material having the probes formed therein and the substrate side, and the secondary electrodes of the main base material having the probes formed therein are electrically connected to the electrodes in the substrate side via the interposer.

Probe structure

A semiconductor device includes a quadrangular semiconductor substrate and a self test circuit formed on the semiconductor substrate. A plurality of pads are formed on the semiconductor substrate, which pads are coupled at least to the self test circuit. The semiconductor substrate includes four rectangular or square regions which each include a respective corner of the quadrangle, and at least two of the pads are respectively located on diagonally opposite ones of the regions from one another.

Semiconductor device and test device for same

A packaging device for holding thereon a plurality of semiconductor devices to be inspected on an inspection device including a probe to be electrically connected to an electrode of each of the semiconductor devices, comprises, holes for respectively receiving detachably therein the semiconductor devices to keep a positional relationship among the semiconductor devices and a positional relationship between the packaging device and each of the semiconductor devices constant with a spacing between the semiconductor devices, in a direction perpendicular to a thickness direction of the semiconductor devices, and electrically conductive members adapted to be connected respectively to the electrodes of the semiconductor devices, and extending to an exterior of the packaging device so that the probe is connected to each of the electrically conductive members.

Packaging device for holding a plurality of semiconductor devices to be inspected

A semiconductor inspecting apparatus having a plurality of electrical connection boards arranged in the inspecting apparatus and a plurality of probes respectively provided on a plurality of beams formed on a first board of said plurality of electrical connection boards, the probes being adapted to be individually brought into contact with a plurality of electrode pads of a semiconductor device for inspection, so as to inspect the semiconductor device while establishing electrical connection therebetween. A one-end supported beam is used as each of the beams, and each of the probes is formed at a portion shifted in a rectangular direction to a center line of a longitudinal direction of the one-end supported beam.

Semiconductor-device inspecting apparatus and a method for manufacturing the same

The invention provides a probe structure in which secondary electrodes of a main base material in which probes are formed can be electrically connected to electrodes in a substrate side even when a lot of probes are formed in a large area, so that a lot of LSIs within a wafer can be tested in one lot in a wafer test process, whereby an efficiency of the test process can be improved. In the probe structure, an interposer constituted by a high rigid material is arranged between the main base material having the probes formed therein and the substrate side, and the secondary electrodes of the main base material having the probes formed therein are electrically connected to the electrodes in the substrate side via the interposer.

A structure is provided such that a plural cantilevers are formed on a first board formed of silicon, probes are respectively formed on the individual cantilevers at positions each offset perpendicularly to a longitudinal center line of the cantilever, and wiring connected continuously from each probe to a secondary electrode pad portion through an insulating layer. A structure is alternatively adopted such that by using a both-ends supported beam formed of silicon as the beam, each probe is formed at a position offset toward a supported portion side of the both-ends supported beam.

Growing community of inventors

Chiyoda, Japan

Toshio Miyatake