Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Toshio Matsuki

Hiroaki Fujimoto

Takayuki Yoshida

Ichiro Yamane

Tadaaki Mimura

Yoshiaki Kasuga

Takio Yamashita

Takashi Otsuka

The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Structure of chip on chip mounting preventing from crosstalk noise

A microcomputer chip is formed with a CPU core, a peripheral circuit, a built-in ROM, and a built-in RAM. An emulation functional chip is formed with an emulation control circuit for controlling the whole process of emulation. First electrode pads formed on the functional surface of the microcomputer chip are electrically interconnected to second electrode pads formed on the functional surface of the emulation functional chip with connecting bumps interposed therebetween. The microcomputer chip and the emulation functional chip are modularized using an insulating resin with the first electrode pads being connected to the second electrode pads.

Semiconductor device

The present invention reduces crosstalk noise, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip (1) having a first electrode pad (2) and a first wiring layer (9), and a second semiconductor chip (5) having a second electrode pad (6) and a second wiring layer (10). A bump (4) is provided for electrically coupling the first electrode pad (2) and the second electrode pad (6). An insulation layer 8 is disposed between confronting surfaces of the first semiconductor chip (1) and the second semiconductor chip (5). An electro-conductive layer (7) is disposed between the confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Growing community of inventors

Kyoto, Japan

Toshio Matsuki