Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Toshio Matsuda

Susumu Koike

Hitoo Iwasa

Akira Takamori

Naoki Kohara

Ginjiro Kambara

Nobuyuki Iwamoto

Toshiharu Kawabata

Tatsuhisa Taguchi

Katuharu Fujio

Yoshiyuki Morikawa

Takahiro Hasegaki

Kaichi Yamada

Koichi Yoshihiro

A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layerwhich is coated with the SiN layerTi layersand, Au layersand, heat sink layerand solder layerSemiconductor laser elementis placed and fixed on Au layer. Heat sink layeris inserted between Au layerand Ti layerand is approximately 20 &#x3bc;m thick. Reflection unitfor reflecting laser beams LB includes at the surface thereof Al layerand dielectric layeras a reflection layer that provides a high refractive index for blue light laser beams.

Semiconductor laser apparatus and production method thereof

A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer, which is coated with the SiN layer, Ti layersand, Au layersand, heat sink layer, and solder layer. Semiconductor laser elementis placed and fixed on Au layer. Heat sink layeris inserted between Au layerand Ti layerand is approximately 20 &#x3bc;m thick. Reflection unitfor reflecting laser beams LB includes at the surface thereof Al layerand dielectric layeras a reflection layer that provides a high refractive index for blue light laser beams.

Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5.times.10.sup.16 cm.sup.-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.

Pure green light emitting diodes and method of manufacturing the same

In a sliding vane type compressor including a cylinder having a cylindrical inner wall, a rotor disposed within the cylinder and having a vane slot, and an oil supply means for feeding oil during the rotation of the rotor to the vane backpressure chamber of the vane inserted slidably into the vane slot, refrigerating gas within the refrigeration cycle is used as vane backpressure means, which providing a gas passage opening, closing means is provided in a passage for supplying the gas, the gas passage being shut off during the steady operation of the compressor to cause the oil supply amount to be proper into the vane backpressure chamber to improve the durability and efficiency of the compressor.

Vane backpressure providing apparatus for sliding vane type compressor

In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1.times.10.sup.4 cm.sup.-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission are obtained.

Manufacturing green light emitting diodes

An improved vane type rotary compressor provided with a control mechanism of a lubricating oil supply passage by which the lubricating oil supply passage is arranged to be opened during operation of the compressor, and to be closed during shut-down of the compressor for obtaining a sufficient amount of lubricating oil supply during operation and also for preventing reverse rotation during shut-down of the compressor.

Rotary vane compressor with valve control of oil to bias the vanes

A method of treating semiconductor substrate comprising the step of after epitaxial growth of III-V compound semiconductor layers on a substrate by a liquid phase epitaxial growth method using gallium as solvent, the substrate is treated by an etchant comprising phosphoric acid, acetic acid and nitric acid thereby selectively removing residue stains of gallium on the surface of the substrate.

Etching of gallium stains in liquid phase epitoxy

The present invention provides a memory device of MNOS FET type wherein a high concentration part and a low concentration part contact each other in the source region and the drain region, and further, double layered insulation films under the gate electrode extending across the source region and drain region are made to contact only the lower concentration part, so that an acceptor impurity is prevented from mixing into the double layered insulation films from the source region and drain region, thus greatly improving the life (number of repeated uses) of the device.

Non-volatile memory device

A silicon oxide layer containing a group III element such as boron, aluminum or gallium is formed on a semiconductor substrate. The substrate is then heat treated at 600.degree. C - 1200.degree. C in a nitrogen atmosphere and a diffusion process carried out thereafter. In this manner, the impurity diffused surface of the semiconductor body is controlled to a low concentration not higher than 10.sup.18 /cm.sup.3 of the group III element. This is due to the fact that the silicon oxide layer containing the group III element (that is, the so-called doped oxide) is partly converted to a nitride in the course of an ammonia treatment resulting in an impurity source for the low concentration diffusion. The present method is useful in forming the base region of an NPN transistor, for example.

Growing community of inventors

Otsu, Japan

Toshio Matsuda