Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Vlsi Engineering Corp.

Toshio Maeda

Hiroyuki Uchiyama

Hisashi Nakamura

Hideki Nakagawa

Toshiki Misonou

Yutaka Kobayashi

Yoshitaka Tadaki

Masayuki Kojima

Atsuyoshi Koike

Toshihiro Sekiguchi

Kazuo Nojiri

Jun Murata

Hiromichi Enami

Osamu Kasahara

Hiroyuki Miyazawa

Atsushi Ogishima

Hiroko Kaneko

Michimasa Funabashi

Masaki Nagao

Yasuo Kiguchi

Kazuya Kadota

Akihiro Watanabe

Tadashi Chikahara

Masato Sadaoka

Yoshio Maruoka

Ryoichi Hori

Yasushi Takahashi

Toshio Sasaki

Kazuyoshi Oshima

Kazuyuki Miyazawa

Katsumi Matsumoto

Masamichi Ishihara

Hidetoshi Iwai

Toshiyuki Sakuta

Yasuhiro Kasama

Eiji Miyamoto

Hiromi Matsuura

Osamu Sakai

Masanori Tazunoki

A method for driving a liquid crystal display device that decreases a sticking of the display image. The liquid crystal display device includes a pixel electrode and a counter electrode. A polarity of the signal supplied to the pixel electrode is periodically inverted at the first period and the second period. The length of the first period is different from that of the second period.

Method for driving a liquid crystal display device

In a liquid crystal display device which inputs analogue video signals after phase development, the deterioration of display quality due to the irregularities of circuit can be reduced. To correct the irregularities due to a plurality of analogue circuits, the liquid crystal display device includes look up tables for a plurality of analogue circuits in the inside of a digital signal processing circuit. The liquid crystal display device performs the correction of irregularities of the analogue circuits based on data set in the look up tables.

Liquid crystal display

A projector includes a liquid crystal display device has a liquid crystal display panel and a display control device coupled to the liquid crystal display panel. The display control device is composed of a first section for receiving an externally supplied video signal, and a second section succeeding the first section and coupled to the liquid crystal display panel. The second section is formed of a circuit for amplifying and converting the video signal into an ac signal supplied from the first section, and a drive pulse circuit for outputting drive pulses for driving the liquid crystal display panel. The first section and the second section are fabricated on first and second substrates separate from each other, respectively. The second section is disposed proximately to the liquid crystal display panel, and the first section and the second section are coupled via a flexible cable.

Liquid crystal projector

A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Semiconductor integrated circuit, method of fabricating the same and

A dynamic random access memory in which data are successively read out responsive to a read command signal is provided with a boosting circuit device. The boosting circuit device has a pumping circuit operable with a first electric power source at a first voltage and responsive to a control clock signal for producing a second electric power at a second voltage boosted higher than the first voltage of the first electric power. A one-shot pulse generator is provided for generating a single pulse from which a pre-pumping pulse is produced to be included in the control clock signal. Thus, the control clock signal contains a pre-pumping pulse and a plurality of clock pulses following the pre-pumping pulse, so that the second voltage of the second electric power has been boosted higher than the first voltage of the first electric power by the pre-pumping pulse in advance of a successive readout of data.

Boosting circuit device capable of pre-pumping and semiconductor memory

A semiconductor integrated circuit memory structure is provided which uses macro-cellulated circuit blocks that can permit a very large storage capability (for example, on the order of 64 Mbits in a DRAM) on a single chip. To achieve, this, a plurality of macro-cellulated memory blocks can be provided, with each of the memory blocks including a memory array as well as additional circuitry such as address selection circuits and input/output circuits. Other peripheral circuits are provided on the chip which are common to the plurality of macro-cell memory blocks. The macro-cell memory blocks themselves can be formed in an array so that their combined storage capacity will form the large overall storage capacity of the chip. The combination of the macro-cell memory blocks and the common peripheral circuitry for controlling the memory blocks permits a faster and more efficient refreshing operation for a DRAM. This is enhanced by a LOC (Lead On Chip) arrangement used in conjunction with the memory blocks.

Semiconductor integrated circuit device having a plurality of memory

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Chiba, Japan

Toshio Maeda