Sii Nanotechnology Inc.

Seiko Instruments Inc

Toshio Kodama

Yasuhiko Sugiyama

Toshiaki Fujii

Kouji Iwasaki

Masakatsu Hasuda

Yasuyuki Takagi

Toshiaki Fuji

An apparatus has a holder member () which holds a sample (), and a removing beam source () which irradiates an inert ion beam onto a cross section () of the sample () held by a holder member () and removes a fracture layer on the cross section (). Then, the removing beam source () is disposed on the holding end side of the sample () with respect to the normal L of the cross section () so that the irradiating direction of the inert ion beam is tilted at the tilt angle &#x3b8; to the normal L with respect to the cross section ().

Ion beam device and ion beam processing method, and holder member

There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a samplewith a prescribed liquid metal ion beam so as to form a cross section, and a gaseous ion beam irradiation devicefor scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.

Ion beam device and ion beam processing method

An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.

Ion beam apparatus, ion beam processing method and sample holder member

A thin film is etched by irradiating charged particles to a surface of the thin film. An etching time of the thin film is measured by observing a change in intensity of secondary charged particles emitted by etched portions of the thin film. A thickness of the thin film is calculated in accordance with the measured etching time.

Growing community of inventors

Chiba, Japan

Toshio Kodama