Hitachi Metals, Ltd.

Toshio Kobayashi

Chiharu Mitsumata

Shin Noguchi

Hisao Kurosawa

A magnetoresistive (MR) sensor for MR heads comprising a magnetoresistive ferromagnetic layer (MR layer) and an antiferromagnetic layer in direct contact with the surface of the MR layer. The MR layer has a face-centered-cubic (fcc) structure. The crystalline structure of the antiferromagnetic layer is the fcc structure in the vicinity of the interface of the MR layer and the antiferromagnetic layer, and continuously changes to a face-centered-tetragonal (fct) structure toward the surface opposite to the interface. The interface of the MR layer and the antiferromagnetic layer is continuous with respect to the crystalline structure due to the epitaxial growth of the antiferromagnetic layer on the surface of the MR layer.

Magnetoresistive sensor

Method of producing magnetoresistive sensor

A magnetoresistive (MR) head for sensing magnetic data recorded on a magnetic recording medium with high track density and high linear density includes a magnetoresistive conductive layer (MR layer), a soft magnetic layer (SAL) for transversely biasing the MR layer and hard magnet layers for longitudinally biasing and controlling magnetization in the central sensing regions of the MR layer and the SAL. The longitudinal bias applied to the SAL is less than that to the MR layer so that a sensing current produces an effective magnetic field to saturate the SAL transversely. So, magnetization in the MR layer is kept at an angle of 40 to 45 degrees to easy magnetization direction of the MR layer and the improved reproducing output is obtained.

Growing community of inventors

Fujioka, Japan

Toshio Kobayashi