Sumitomo Chemical Company, Limited

Sciocs Company Limited

Toshio Kitamura

Takehiro Yoshida

Masatomo Shibata

Tetsuji Fujimoto

Hajime Fujikura

Takashi Sato

Takayuki Suzuki

Taichiro Konno

Yukio Abe

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate that has a diameter of 50 mm or more and whose low index crystal plane closest to a main surface is a (0001) plane, wherein a density of etch pits when applying etching to the main surface with an alkaline etching solution is less than 1×10cm, and among peaks appearing in a histogram of diameters of the etch pits, when a diameter of a first peak appearing on a smallest diameter-side is a, a total number of the etch pits with a diameter exceeding 4is 1/1000 or less of a number of etch pits forming the first peak.

Gallium nitride single crystal substrate

An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Nitride crystal

There is provided a method for manufacturing a group-III nitride substrate, including: (a) preparing a substrate which is made of a group III-nitride crystal and which has a high oxygen concentration domain where an oxygen concentration is higher than that of a matrix of the crystal; (b) irradiating the substrate with laser beam aiming at the high oxygen concentration domain, forming a through-hole penetrating the substrate in a thickness direction, and removing at least a part of the high oxygen concentration domain from the substrate; and (c) embedding at least a part of an inside of the through-hole by growing the group-III nitride crystal in the through-hole.

Method for manufacturing group-III nitride substrate and group-III nitride substrate

A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis.

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Hitachi, Japan

Toshio Kitamura