Canon Kabushiki Kaisha

Tokyo Institute of Technology

Japan Science and Technology Agency

Agc Inc.

Tokyo Institute of Tech

Toshio Kamiya

Hideo Hosono

Kenji Nomura

Masahiro Hirano

Masafumi Sano

Katsumi Nakagawa

Hiromichi Ota

Keishi Saito

Tatsuya Iwasaki

Hideya Kumomi

Hiroshi Yanagi

Tohru Den

Katsumi Abe

Satoru Matsuishi

Hidenori Hiramatsu

Sungwng Kim

Yoichi Kamihara

Satoru Watanabe

Hisato Yabuta

Masashi Miyakawa

Nobuhiro Nakamura

Naomichi Miyakawa

Yoshitake Toda

Kazushige Ueda

Masahiro Orita

Junghwan Kim

Katsurou Hayashi

Eiji Motomitsu

Seok Gyu Yoon

Takatoshi Nomura

An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm/Vs or more.

Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10/cm, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer, an amorphous oxide having an electron carrier concentration less than 10/cmis used in the channel layer

Amorphous oxide and thin film transistor

A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO(ZnO)(wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm/(V&#xb7;sec) and an electron carrier concentration is less than 10/cm, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Switching element

Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F, Clor Br). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti, Zr, Hf, C, Si, Ge, Snor Pb) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg, Ca, Sror Ba). The Tc of the superconducting compound is controlled in accordance with the ion substitution amount.

Superconducting compound and method for producing the same

A magnetic semiconductor material contains at least one type of transition metals (Mn, Fe, Ru, Re, and Os) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

Magnetic semiconductor material

Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.

Layered compound, superconductor and method for producing same

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Display

An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 10/cmis used for the N-type region.

Integrated circuits utilizing amorphous oxides

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1&#xd7;10/cm, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

Field effect transistor

Growing community of inventors

Yokohama, Japan

Toshio Kamiya