Tdk Corporation

Maeda & Suzuki Patent Co., Ltd.

Toshio Asahi

Hitoshi Saita

Masamitsu Haemori

Masahito Furukawa

A dielectric film includes a main component of a complex oxide represented by a general formula of (SrCa)TiO. 0.40&#x2264;x&#x2264;0.90 and 0.90&#x2264;y&#x2264;1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 32&#xb0; or more and 34&#xb0; or less to an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 46&#xb0; or more and 48&#xb0; or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K&#x3b1; ray as an X-ray source is 3.00 or more.

Dielectric film, dielectric element, and electronic circuit board

The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr, Ca)(TiHf)ON, in which 0&#x3c;x&#x2264;0.15, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, and 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

Dielectric composition, dielectric thin film, dielectric element, and electronic circuit board

To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (SrCa)(TiHf)ON, in which 0.15&#x3c;x&#x2264;0.90, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 &#x3bc;m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Dielectric thin film, dielectric element and electronic circuit board

Disclosed herein is a thin film capacitor embedded substrate that includes a substrate and a plurality of thin film capacitors including at least first and second thin film capacitors embedded in the substrate. The first and second thin film capacitors are connected in parallel and have mutually different self-resonant frequencies.

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Tokyo, Japan

Toshio Asahi