Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Toshio Araki

Nobuaki Ishiga

Kazunori Inoue

Osamu Miyakawa

Shingo Nagano

Harumi Murakami

Yuichi Masutani

Yasuyoshi Itoh

Tadaki Nakahori

Fumihiro Goto

Eiji Shibata

Makoto Hirakawa

Hiroyasu Itoh

Masanao Nabeshima

Hatsumi Kimura

Tomoki Nakamura

Fumihiro Gotoh

The liquid crystal display device, in which liquid crystal is filled between a TFT array substrate having a TFT and a counter substrate placed opposite to the TFT array substrate, includes a pixel electrode placed at least partly directly over or under a drain electrode of the thin film transistor so as to directly overlap the drain electrode, an interlayer insulating layer placed to cover the pixel electrode, and a counter electrode placed on the interlayer insulating layer and having a slit to generate a fringe electric field with the pixel electrode, wherein the counter electrode is placed to overlap a gate line connected to a gate electrode of the TFT in at least part of area and connected to the counter electrode in an adjacent pixel across the gate line.

Liquid crystal display device and method of manufacturing the same

A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Thin film transistor for a liquid crystal device in which a sealing pattern is electrically connected to a common electrode wiring

An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.

Active matrix substrate and method of manufacturing the same

According to an aspect of the present invention, there is provided a liquid crystal display that includes a gate electrode and line formed on a transparent insulating substrate, a gate insulating film covering the gate electrode and line, a semiconductor layer formed on the gate insulating film, a source electrode, a source line, and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The semiconductor layer is integrally formed of three portions which are a crossover portion of the source line and the drain line, a TFT portion, and a connecting portion connecting the crossover portion to the TFT portion. A part of the crossover portion on the connecting portion side and the whole connecting portion are covered by the source electrode and the source line.

Liquid crystal display comprising a semiconductor layer integrally formed and including a crossover portion, a TFT portion, and a connection portion and manufacturing method for the same

A display panel according to the present invention includes: a common wiring () formed above a TFT array substrate () and having a first terminal (); a first transparent conductive film () formed above the common wiring (); an interlayer insulating film () formed above the first transparent conductive film () and having a first terminal portion contact hole () formed outside a display area () and inside a sealing material (); and a terminal pad () formed above the interlayer insulating film () and electrically connected to the common wiring () through the first transparent conductive film () in the first terminal portion contact hole ().

Display panel and method of manufacturing the same

According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

Thin film transistor in which an interlayer insulating film comprises two distinct layers of insulating material

A method of manufacturing a thin film transistor array substrate according to the present invention includes: forming a pattern made of a first conductive film; stacking a gate insulating film, a semiconductor layer, and a resist in the stated order; forming a resist pattern having a step structure in a thickness direction; forming an exposed area of the first conductive film and a pattern of the semiconductor layer by using the resist pattern; forming a pattern made of a second conductive film in contact with the first conductive film in the exposed area of the first conductive film; and forming a pattern made of a third conductive film. The first conductive film forms a gate electrode, and the second conductive film forms each of a source electrode and a drain electrode. The third conductive film forms a pixel electrode, and the second conductive film is coated with an upper-layer film.

Method of manufacturing thin film transistor array substrate and display device

A liquid crystal display element includes: a first substrate having a first surface and including a pixel electrode; a second substrate having a second surface opposing to the first surface, and including a light-shielding film, a thickness adjusting film and a counter electrode arranged in sequence in a direction to the second surface; a sealing material having a frame-shape to bond the first substrate and the second substrate; a liquid crystal layer provided in a region surrounded by the sealing material and between the first substrate and the second substrate, wherein the thickness adjusting film is provided to cover the light-shielding film to define the thickness of the liquid crystal layer, and has a contact hole, wherein the counter electrode is provided to oppose to the pixel electrode, and electrically connected to the light shielding film via the contact hole.

Liquid crystal display element

A pixel electrode is disposed to cover the inner surfaces of a pixel-drain contact hole passing through a third insulating film and a second insulating film to reach a drain electrode. At the bottom of the pixel-drain contact hole, the pixel electrode is electrically connected with the drain electrode through a contact conductor film. The pixel-drain contact hole is formed of a connection of a contact hole passing through the second insulating film and a contact hole passing through the third insulating film. The dimensions of the opening end of the contact hole are larger than its dimensions at the bottom, and thus the inner surfaces of the contact hole are smoothly sloped and shaped like a crater in cross section.

Electro-optic display and connection between drain electrode and pixel electrode

A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:&#x2014;(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.

Growing community of inventors

Kumamoto, Japan

Toshio Araki