Other

Hitachi, Ltd.

Renesas Technology Corp.

Toshio Ando

Akitoshi Toda

Hidenori Sato

Yoshiyuki Hayashi

Satoshi Yamamoto

Yoshio Okamoto

Yasuhiro Shimamoto

Toshihide Nabatame

Masahiko Hiratani

Yuichi Matsui

Shinpei Iijima

Hiroshi Sakuma

Yoshitsugu Tsutsumi

Tatsuya Tominari

Yoshinori Yoshida

Akira Ohkawa

Hideki Tomioka

The external base electrode has a two-layered structure where a p-type polysilicon film doped with a medium concentration of boron is laminated on a p-type polysilicon film doped with a high concentration of boron. Therefore, since the p-type polysilicon film doped with a high concentration of boron is in contact with an intrinsic base layer at a junction portion between the external base electrode and the intrinsic base layer, the resistance of the junction portion can be reduced. In addition, since the resistance of the external base electrode becomes a parallel resistance of the two layers of the p-type polysilicon films, the resistance of the p-type polysilicon film whose boron concentration is relatively lower is dominant.

Semiconductor device for performing photoelectric conversion

A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

Fabricating method of semiconductor integrated circuits

Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH ) to monosilane (SiH ) greater than that upon deposition of a silicon nitride film over a flat substrate.

Manufacturing method of semiconductor integrated circuit device

A scanning unit for moving an object to be moved along at least one axis, which comprises a first actuator for moving the object along a first axis, the first actuator having a pair of end portions, and the object being attached to one of the end portions, the first actuator being held at a position in the vicinity of the center in dimension or the center of gravity thereof.

Scanning unit and scanning microscope having the same

A method of and an apparatus for manufacturing semiconductors, in which a liquid raw material can be uniformly supplied onto a wafer and a gas required for film formation can be also uniformly supplied onto the wafer. A liquid raw material is sprayed from a tip end of a vaporizing nozzle into a vacuum chamber as liquid droplets, and is vaporized by heat generated from the wafer placed on a susceptor. When the liquid raw material is sprayed, a gas required for film forming reaction is supplied into the vacuum chamber from a gas supply pipe provided on an outer periphery of the vaporizing nozzle. The vaporizing nozzle and the gas supply pipe are formed to be concentric, and a liquid raw material spray port is formed centrally of the vaporizing nozzle. A gas supply port or ports on the gas supply pipe are formed on an outer peripheral portion of the vaporizing nozzle to be arranged in annular manner, and the liquid raw material spray port and the gas supply port or ports are formed to be in parallel to each other in a longitudinal direction. The gas supply port or ports are arranged in the same plane as the liquid raw material spray port is, or on an upstream side where the liquid raw material is supplied.

Method of and apparatus for manufacturing semiconductors

Growing community of inventors

Kunitachi, Japan

Toshio Ando