Shinshu University

Fujikoshi Machinery Corp.

Novel Crystal Technology, Inc.

Toshinori Taishi

Keigo Hoshikawa

Takumi Kobayashi

Yoshio Otsuka

Etsuko Ohba

Xinming Huang

Tatsuo Fukami

A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

Production apparatus for metal oxide single crystal and production method for metal oxide single crystal

A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500&#xb0; C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Production apparatus for gallium oxide crystal capable of preventing harmful substances formed in furnace from being diffused to surroundings of furnace

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900&#xb0; C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Gallium oxide crystal manufacturing device

A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1&times;10 atoms/cm or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7&times;10 atoms/cm or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.

Growing community of inventors

Koshoku, Japan

Toshinori Taishi