Ihi Corporation

Toshinori Ota

Isao Imai

Ujihiro Nishiike

Tsuyoshi Tosho

Kouiti Fujita

Hiroki Yoshizawa

Hirold Yoshizawa

A metal mixture is prepared, in which an excess amount of Te is added to a (Bi&#x2014;Sb)Tebased composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 &#x3bc;m. Thus, a plate shaped raw thermoelectric semiconductor materialsare manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materialsare layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact. After that, the compactis plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials. As a result, a thermoelectric semiconductorhaving crystal orientation in which extending direction of C face and the direction of c-axis of the hexagonal structure are approximately aligned. As a result, the crystalline orientation is improved, and the thermoelectric Figure-of-Merit is increased.

Thermoelectric semiconductor material, thermoelectric semiconductor element using thermoelectric semiconductor material, thermoelectric module using thermoelectric semiconductor element and manufacturing method for same

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Tokyo, Japan

Toshinori Ota