Renesas Technology Corp.

Hitachi, Ltd.

Hitachi Tohbu Semiconductor, Ltd.

Renesas Electronics Corporation

Other

Renesas Eastern Japan Semiconductor, Inc.

Hitachi Microcomputer Eng. Ltd.

Toshinori Hirashima

Munehisa Kishimoto

Toshiyuki Hata

Ryoichi Kajiwara

Masahiro Koizumi

Kazuya Takahashi

Hiroshi Sato

Keiichi Ookawa

Shigeru Ishii

Toshiaki Morita

Takao Sonobe

Kenji Hanada

Yasushi Takahashi

Kazuo Watanabe

Masumi Kasahara

Osamu Takada

Shizuo Kondo

Setsuo Ogura

Toyohiko Hongo

Takefumi Endo

Hiroshi Satou

Hiroi Oka

Akira Takigawa

Mikio Haijima

Yoshiki Akamatsu

Toshiak Morita

A semiconductor device featuring a semiconductor chip including a MOSFET and having a first main surface and a second, opposing main surface, a source electrode pad and a gate electrode pad over the first main surface, a drain electrode over the second main surface, a source external terminal and a gate external terminal, each having a first main surface electrically connected to the source electrode pad and gate electrode pad of the chip, respectively, and a drain external terminal having a first main surface and a second, opposing main surface and being electrically connected to the second main surface of the chip, each of the source, gate and drain external terminals having second main surfaces thereof in a same plane, and, in a plan view of the external terminals, the gate external terminal has a portion located between the source and drain external terminals in at least one direction.

Mosfet package

A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET disposed on the obverse surface, a third electrode of the MOSFET disposed on a second, opposing surface of the chip, first, second, and third conductive members, each having top surface and opposing bottom surface, the first, second, and third conductive members connecting with the first, second, and third electrodes electrically, respectively, a sealing body having top and bottom surfaces and sealing parts of the first, second, and third conductive members, the first conductive member having first, second, and third contiguous portions, the first portion is positioned over the first electrode, the second is positioned between the first and second portions and the third portion is positioned under the obverse surface of the chip.

Semiconductor device

A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

MOSFET package

A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET () has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant (), a plurality of outer leads (), () protruding in parallel from the same lateral surface of the resin encapsulant () and a header () bonded to a back surface of the semiconductor pellet and having a header protruding portion () protruding from a lateral surface of the resin encapsulant () opposite to the lateral surface from which the outer leads protrude, wherein the header () has an exposed surface () exposed from the resin encapsulant (); the outer leads (), () are bent; and the exposed of the outer leads (), () are provided at substantially the same height.

Semiconductor device and a method of manufacturing for high output MOSFET

A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Semiconductor device and a method of manufacturing the same

A radio transmitting/receiving device having at least three modules. The first module includes a first function for amplifying a radio frequency signal, demodulating the amplified radio frequency signal to a baseband signal and outputting the same, and a second function for modulating the input baseband signal, converting the modulated baseband signal to a radio frequency and outputting the same. The second module includes a function for amplifying the input radio frequency. The third module includes a function for executing a baseband signal process and controlling respective units according to a transmission/reception sequence based on a communication protocol.

Radio transmitting/receiving device

An electronic device having a first semiconductor device for powering MOSFET and a second semiconductor device for controlling on a principal surface and sealed by a resin body. The first semiconductor device has a semiconductor chip with a first and a second electrodes formed on a first principal surface and also with a third electrode formed on a second principal surface, and an insulative or dielectric sheet laid out between a first lead and the first principal surface of the semiconductor chip and between a second lead and the semiconductor ship for covering a specified area of the first principal surface of the semiconductor chip other than a region in which a plurality of projected electrodes are disposed. An upper surface of the first and second leads of the first semiconductor device is positioned under an upper surface of the resin body of the second semiconductor device in a thickness direction of a wiring substrate.

Electronic device

Growing community of inventors

Takasaki, Japan

Toshinori Hirashima