Other

Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Hitachi Device Engineering Co., Ltd.

Hitachi Ulsi Engineering Corp.

Toshinori Harada

Shoji Kubono

Takayuki Kawahara

Hiroshi Sato

Naoki Miyamoto

Hiroaki Kotani

Atsushi Nozoe

Michitaro Kanamitsu

Tetsuya Tsujikawa

Takayuki Yoshitake

In a nonvolatile semiconductor memory in which multiple-value information is stored in one memory cell by setting a plurality of threshold values, data is successively read from word lines while continuously changing the word-line read level from a lowest level to a highest level, and the next bit line is selectively precharged in accordance with the data stored in latch means for storing read data.

Nonvolatile semiconductor memory and read method

Data are generated based on additional write data input to data latch circuits (DLR and DLL) and data read from memory cells (MC) to program non-volatile memory cells in a write state into the same write state and to program non-volatile memory cells in an erase state into a write state indicated by the additional write data. The generated data are latched in the data latch circuits to perform a logical synthesis process for additional writing. Even after the additional write operation, the logically synthesized data remain in the data latch circuits, and the latched data can be reused against abnormality in writing. This eliminates the need for receiving write data again from the outside when the additional write operation is to be retried.

Semiconductor device, data processing system and a method for changing threshold of a non-volatile memory cell

Semiconductor device, data processing system and a method for changing

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Ome, Japan

Toshinori Harada