Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electronics Corporation

Communications Research Laboratory, Ministry of Posts and

Toshinobu Matsuno

Kaoru Inoue

Katsunori Nishii

Hiroyuki Masato

Daisuke Ueda

Motonori Ishii

Kazutoshi Onozawa

Yoshito Ikeda

Kimiaki Toshikiyo

Takanori Yogo

Takeshi Fukuda

Takashi Hirose

Manabu Yanagihara

Katsuhiro Kanamori

Mitsuru Tanabe

Yoshiharu Anda

Atsushi Nakagawa

Teruhiro Shiono

Mitsuyoshi Mori

Toru Okino

Toshiaki Matsui

Kazuhisa Fujimoto

Katsunori Nishi

Nobumitsu Hirose

Jean C Harmand

Tadayosi Nakatuka

The present disclosure is an optical filter which includes: a Fabry-Perot resonator equipped with a laminated structure including one sheet of first metal layer, one sheet of second metal layer, and a dielectric layer; and one sheet of plate-shaped wire grid polarizer. The second metal layer is parallel to the first metal layer, the dielectric layer is interposed between the first metal layer and the second metal layer, the one sheet of plate-shaped wire grid polarizer is embedded in the dielectric layer, the one sheet of plate-shaped wire grid polarizer comprises three or more metal wire layers, the metal wire layers are parallel to one another, and the one sheet of plate-shaped wire grid polarizer is parallel to the first metal layer. In the optical filter according to the present invention, the effective extinction ratio of the wire grid polarizer is increased.

Optical filter with Fabry-Perot resonator comprising a plate-shaped wire grid polarizer

In image capturing processor in one embodiment comprises: an image capturing section including an image sensor that captures a polarization image of an object being illuminated with an illuminating light beam; and an image processing section. The image processing section has: a light intensity image generator which generates a light intensity image based on the output of the image sensor; a polarization degree image generator which generates a polarization degree image by calculating the degree of polarization on a pixel-by-pixel basis; a retouching section which generates a retouched polarization image by enhancing the degree of polarization of the polarization degree image at depressions on a micro-geometric surface of the object and by correcting at least one of its hue, saturation and value; and an image synthesizing section which synthesizes the retouched polarization image and the light intensity image together.

Imaging device and endoscope for detecting and displaying the shape of the micro-geometric texture of a transparent structure

A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

Solid state imaging device and method for fabricating the same

The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.

Phase shift mask and method for manufacturing light-collecting device

The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.

Manufacturing method of light-collecting device, light-collecting device and phase shift mask

The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 &#x3bc;m square in size, and includes a distributed index lens (), a color filter (for example, for green) (), an Al interconnections (), a signal transmitting unit (), a planarized layer (), a light-receiving device (Si photodiodes) (), and an Si substrate (). The two-stage concentric circle structure of the distributed index lens is formed by SiO(n=2) with the film thickness 1.2 &#x3bc;m ('grey color'), the film thickness 0.8 &#x3bc;m ('dots pattern') and the film thickness of 0 &#x3bc;m (&#x201c;without pattern: white color&#x201d;), and the medium surrounding the distributed index lens ()is air (n=1).

Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereof

A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.

Solid-state imager and solid-state imaging apparatus having a modulated effective refractive index distribution and manufacturing method thereof

The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.

Method of fabricating a semiconductor device

An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III nitride

A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.

Lateral bipolar transistor

A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.

Lateral bipolar transistor and method for producing the same

An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single crystal silicon layer with a second insulating film interposed therebetween. A p-type second single crystal silicon layer is provided as intrinsic base region on a side of the first single crystal silicon layer, second insulating film and first polysilicon layer. An n-type third single crystal silicon layer is provided as emitter region on a side of the second single crystal silicon layer. And an n-type third polysilicon layer is provided on the first insulating film as extension of an emitter region and is connected to a side of the third single crystal silicon layer.

Bipolar transistor and method for fabricating the same

A first resist film for EB exposure, a buffer film, and a second resist film for i-line exposure are applied sequentially onto a substrate. Thereafter, the second resist film and the buffer film are subjected to patterning for forming a first opening. Then, dry etching is performed with respect to the first resist film masked with the second resist film to transfer the pattern of the second resist film to the first resist film and thereby form a second opening in the first resist film. Subsequently, a third resist film of chemically amplified type is applied to the entire surface of the first resist film to form a mixing layer in conjunction with the first resist film. As a result, the wall faces of the second opening are covered with the mixing layer and the width of the second opening is thereby reduced.

Growing community of inventors

Kyoto, Japan

Toshinobu Matsuno