Mitsubishi Denki Kabushiki Kaisha

Toshinobu Kawamura

Katsumi Satoh

Mikio Bessho

In a GCT device which controls large current at the operating frequency of 1 kHz or more, a ring-shaped gate terminal (,) is made of a magnetic material with the maximum permeability of 15,000 or less in the CGS Gaussian system of units. Further, in the outer end portion of an outer plane portion (,O) of the ring-shaped gate terminal (,), a plurality of slits extending diametrically are provided along the circumference to be coupled to mounting holes (,).

Pressure contact type semiconductor device with ringshaped gate terminal

A compression bonded type semiconductor device including a semiconductor substrate having a top surface and a bottom surface a gate electrode and a cathode electrode formed on the top surface of said substrate, and an anode electrode formed on the bottom surface of said substrate. Also included is an insulating cylinder accommodating the semiconductor substrate, a ring gate electrode contacting said gate electrode, and an external gate terminal having an outer periphery projecting from a lateral side of said insulating cylinder and being rigidly attached thereto, and having an inner periphery contacting said ring gate electrode. Further included is a control gate electrode configured to be electrically connected to said external gate terminal and an external control apparatus, a support member concentrically disposed with respect to the external gate terminal and having an elastic body configured to press together the external gate terminal and the control gate electrode, and a stack electrode configured to compress the compression bonded type semiconductor element and to support the support member.

Growing community of inventors

Tokyo, Japan

Toshinobu Kawamura