Shin-etsu Chemical Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Nippon Telegraph and Telephone Corporation

Toppan Printing Co., Ltd.

S-tec Corporation

Matsushita Electrical Industrial Co., Ltd.

Shin-estu Chemical Co., Ltd.

Nippon Telegraph & Telephone Co.

Matsushita Electric Ind. Co., Ltd.

Toshinobu Ishihara

Satoshi Watanabe

Shigehiro Nagura

Tohru Kubota

Jun Hatakeyama

Akira Yamamoto

Yoshihumi Takeda

Mikio Endo

Katsuya Takemura

Osamu Watanabe

Minoru Takamizawa

Junji Tsuchiya

Kenichi Taguchi

Kazufumi Ogawa

Takanobu Takeda

Tsuguo Yamaoka

Kazumasa Maruyama

Yasuhisa Tanaka

Junji Shimada

Takeshi Kinsho

Youichi Ohsawa

Tsunehiro Nishi

Satoshi Okazaki

Akira Hayashida

Ichiro Kaneko

Hiromi Ohsaki

Wataru Kusaki

Katsuyuki Oikawa

Norihisa Mino

Yoshio Kawai

Mutsuo Nakashima

Jun Watanabe

Tomoyoshi Furihata

Kazuhiro Hirahara

Tomohiro Kobayashi

Akinobu Tanaka

Fujio Yagihashi

Takeshi Nagata

Katsuhiro Uehara

Kiyoshi Motomi

Isao Kaneko

Yukio Inazuki

Hiroki Yoshikawa

Toshio Shinohara

Hisashi Shimizu

Yoshiyuki Tani

Takashi Haraguchi

Yuichi Fukushima

Tadashi Saga

Tetsuo Shimizu

Mitsuo Umemura

Kazuyuki Asakura

Masahide Iwakata

Jiro Nakamura

Hiroshi Mihira

Ken'ichi Itoh

Nobuo Takasaka

Toru Kubota

Seiki Takaya

Masayuki Endou

Kimihiro Okada

Takeru Watanabe

Masaki Ohashi

Masayuki Endo

Shigeru Ohno

Yoshihiro Kubota

Hiroshi Yoshioka

Shoji Ichinohe

Hirofumi Kishita

Kazuhiro Katayama

Masaki Takeuchi

Meguru Kashida

Toshio Yamazaki

Kouichi Yamaguchi

Kazumi Noda

Hiroshi Ohashi

Yasuaki Hara

Ikuo Fukui

Toyohisa Sakurada

Minoru Shigemitsu

Hideharu Tamura

Teruo Fujimoto

Takao Yoshihara

Yasufumi Kubota

Taishi Kobayashi

Kazuhiro Nishikawa

Hideki Sugahara

Tadahito Matsuda

Toshiaki Takahashi

Toru Nakanishi

Mitsuyoshi Oshima

Yoshinobu Isono

Mikio Takagi

Yoshitaka Yanagi

Kenichi Ito

Yoichi Osawa

Miki Kobayashi

Atsushi Takano

Jiyunitirow Maruta

Mikio Endou

There is disclosed a method for producing a substrate for making a microarray, the method comprising: at least, a step of forming a monomolecular film having orientated oxysilanyl groups toward an outmost surface on the substrate; and a step of forming a monomolecular film having orientated amino groups toward an outmost surface on the substrate by applying a solution containing a diamine compound to the oxysilanyl groups. There can be provided a method for producing a substrate for making a microarray in which density and orientation of amino groups orientated toward an outmost surface are controllable, and in addition, there is no delamination of a monomolecular film formed on the substrate.

Method for producing substrate for making microarray

There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.

Method for producing molecule immobilizing substrate, and molecule immobilizing substrate

Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including; a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.

Method for producing hollow structure

To provide a method for manufacturing a substrate for making a microarray which will ensure the secure immobilization of a material in a site-selective manner at a low cost. The method comprises the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the following general formula (1),YSi&#x2014;(CH)&#x2014;X&#x2003;&#x2003;(1), 

Method for manufacturing substrate for making microarray

Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

Double patterning process

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.

Patterning process

A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided. A method for manufacturing a substrate for making a microarray, comprising, a step of forming a resist film on the substrate using a chemically amplified positive resist composition using a copolymer where a content of a monomer unit having a hydroxyl group is 5 mole % or less relative to total monomer units as a binder; a step of patterning the resist film; a step of forming a monomolecular film having a silicon oxide chain on the substrate having the patterned resist film; and subsequently a step of removing the resist film.

A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.

Halftone phase shift mask blank, and method of manufacture

For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.

Film-depositing target and preparation of phase shift mask blank

In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method

Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.

Silicon-containing polymer, resist composition and patterning process

Silicon-containing polymers comprising recurring units of formula (1) are novel wherein Ris a single bond or alkylene, Ris hydrogen or alkyl, R, Rand Rare alkyl, haloalkyl, aryl or silicon-containing group, Ris hydrogen, methyl, cyano or &#x2014;C(&#x2550;O)ORwherein Ris hydrogen, alkyl or acid labile group, Ris alkyl, &#x2014;NRRor &#x2014;ORwherein R, Rand Rare hydrogen or alkyl, a and b are positive numbers satisfying 0&#x3c;a+b&#x2266;1. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

Silicon-containing polymers comprising recurring units of three components represented by the general formula (1) are novel wherein R, Rand Rare hydrogen or Calkyl, R, Rand Rare hydrogen, Calkyl or haloalkyl, or Caryl, Ris Calkyl, n is 1 to 5, p, q and r are positive numbers. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching

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Joetsu, Japan

Toshinobu Ishihara