Tohoku University

Toshinari Watanabe

Tetsuo Endoh

Shoji Ikeda

Hideo Sato

Hiroaki Honjo

Masaaki Niwa

Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7&#xd7;10atoms/mor more in a position of 2 nm inside from an outer circumferential end of the columnar stack.

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Miyagi, Japan

Toshinari Watanabe