Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Toshinari Noda

Takashi Kubo

Kazuki Komaki

Naoki Tatehata

Kazunari Nishihara

Hisao Suzuki

Naoki Wakiya

Naonori Sakamoto

Shigeo Furukawa

Katsuya Morinaka

Naoto Onodera

Hiroki Kamiguchi

Nobuo Sashinaka

Shoichi Taji

Ryosuke Meshii

Naoki Ota

Yoshihiko Tsujikawa

Satoshi Ueda

An infrared detection element includes a substrate, a lower electrode layer, a pyroelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate, and the pyroelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on pyroelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the pyroelectric layer.

Infrared detection element

An infrared ray detecting element includes: a substrate having a cavity; an infrared ray detecting portion including, sequentially stacked, a lower electrode layer, a detection layer, and an upper electrode layer; first and second support portions which support the infrared ray detecting portion above the cavity; and first and second external lead portions for leading electrical signals outputted from the infrared ray detecting portion, to the outside. The first support portion includes, sequentially stacked, a first upper wiring pattern, a first insulating layer, and a first lower wiring pattern. The upper electrode layer is connected to the first external lead portion via the first upper wiring pattern. The second support portion includes, sequentially stacked, a second upper wiring pattern, a second insulating layer, and a second lower wiring pattern. The lower electrode layer is connected to the second external lead portion via the second lower wiring pattern.

Infrared ray detecting element and infrared ray detector including the same

A piezoelectric element includes, in sequence, a substrate containing metallic material; a first intermediate layer; a lower electrode layer; a piezoelectric layer; and an upper electrode layer. The first intermediate layer contains, as a main component, a nitrogen-containing silicon oxide having a silicon-nitrogen bond. The lower electrode layer contains a perovskite-type oxide in (100) preferential orientation. The piezoelectric layer contains a perovskite-type oxide in (001) or (100) preferential orientation.

Piezoelectric element

A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Piezoelectric element and method for manufacturing the same

An infrared sensor element according to the present invention includes a substrate, and a lower electrode layer, a pyroelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the infrared sensor element realizes the pyroelectric layer having a high orientation in a polarization axis direction, an excellent pyroelectric property.

Infrared sensor element

A piezoelectric element includes a substrate, a lower electrode layer, a piezoelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate and the piezoelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on piezoelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the piezoelectric layer.

A lens unit includes a lens barrel () with a through hole (), a first lens () press-fitted into the through-hole (), a first step () catching an outer edge of the first lens () in the through-hole (), a second lens () press-fitted into the through-hole () in a direction of an optical axis of the first lens (), and a second step () catching an outer edge of the second lens () in the through-hole (). The second lens () has a diameter larger than that of the first lens (). A third step () or a sloped portion broadening the through hole from the first lens to the second lens is further provided.

Lens unit

A lens unit includes a first lens () and a second lens () housed in a holder () which may improve aberration. The first lens () is cylindrical having a top that functions as a lens (), and the second lens () is pressed into the cylindrical portion () of the first lens () having a top in such a manner that the inner periphery of the cylindrical portion () of the first lens () is pressed by the outer periphery of the second lens ().

Lens unit and electronic apparatus using same

A lens unit includes a lens holder having an opening and an inner wall, the lens having an optical axis passing through the opening, a first lens having an outer circumference, and arranged in the lens holder along the optical axis, a second lens having an outer circumference, and arranged in the lens holder along the optical axis, and three strut portions provided on the inner wall of the lens holder. The strut portions position the first lens and the second lens. The strut portions have surfaces facing the optical axis, respectively, the surfaces of the strut portions slanting with respect to the optical axis and contacting the outer circumference of the first lens and the outer circumference of the second lens. This lens unit has the lenses positioned accurately.

A sputtering apparatus includes paired targetsdisposed in a vacuum chamber, substrate holderdisposed at a position nearly perpendicular to the paired targetand apart from a space formed by the paired targets, a plasma sourcefor generating reaction plasma by after-glow plasma in the vicinity of the substrate holder, and a lead-in pipewhich connects the plasma sourceto the vacuum chamber. Since reaction plasma of after-glow plasma can be produced in the vicinity of the substrate holder, it is possible to form a thin film of compound close to bulk characteristics at a low substrate temperature without the film being damaged by plasma.

Growing community of inventors

Osaka, Japan

Toshinari Noda