Screen Holdings Co., Ltd.

Toshimitsu Namba

Takeshi Yoshida

Takashi Ota

Takahiro Yamaguchi

Taiki Hinode

Sei Negoro

Jun Sawashima

Kazuhide Saito

Kenji Amahisa

Yasukatsu Kamihiro

A substrate treating apparatus includes a treating housing and a gas supply unit. The treating housing treats substrates in the interior thereof. The gas supply unit supplies a gas to the interior of the treating housing. The gas supply unit has a filter, a duct, and a fan. The filter is located in an upper part of the treating housing. The filter blows off the gas to the interior of the treating housing. The duct is provided in the exterior of the treating housing. The duct is connected to the filter. The fan is provided in the exterior of the treating housing. The fan is connected to the duct. The fan is located in a position not overlapping the filter in plan view. At least part of the fan is located in the same height position as the treating housing.

Substrate treating apparatus

A processing liquid is supplied from a supply tank to a processing liquid nozzle of a processing unit, and the processing liquid is supplied from the processing liquid nozzle to a substrate. The processing liquid used in the processing unit is collected and selectively supplied to first and second replenishment tanks. In a period in which the used processing liquid is supplied to the first replenishment tank, the supply tank is replenished with the processing liquid in the second replenishment tank, and the processing liquid in the first replenishment tank circulates while being heated by a heater. In a period in which the used processing liquid is supplied to the second replenishment tank, the supply tank is replenished with the processing liquid in the first replenishment tank and the processing liquid in the second replenishment tank circulates while being heated by the heater.

Substrate processing apparatus

The substrate processing apparatus includes a substrate holding unit that holds a substrate horizontally, a substrate rotating unit that rotates the substrate held by the substrate holding unit around a prescribed rotational axis extending along a vertical direction, a processing liquid supply nozzle that moves in a horizontal direction and supplies a processing liquid onto an upper surface of the substrate held by the substrate holding unit, a shielding member that shields an atmosphere between the shielding member and the upper surface of the substrate held by the substrate holding unit from an ambient atmosphere, an inert gas supply unit that supplies an inert gas between the upper surface of the substrate held by the substrate holding unit and the shielding member, and a shielding member rotating unit that rotates the shielding member around the rotational axis. The shielding member includes an annular portion that surrounds the substrate held by the substrate holding unit, and a passage-allowing portion that is provided in the annular portion and allows the processing liquid supply nozzle to pass through the annular portion. The substrate processing apparatus includes a controller that is programmed so as to control the shielding member rotating unit to adjust a position of the passage-allowing portion in the rotational direction such that the processing liquid supply nozzle is to be passed through the annular portion.

Substrate processing apparatus and substrate processing method

A phosphoric acid aqueous solution in a production tank circulates a circulation system. The circulation system is configured to be switchable between a first state in which the phosphoric acid aqueous solution is circulated through a bypass pipe and a second state in which the phosphoric acid aqueous solution is circulated through a filter. When a silicon containing liquid is supplied to the production tank, the circulation system is switched to the first state. When silicon particles are uniformly dispersed in the phosphoric acid aqueous solution, the circulation system is switched to the second state. Alternatively, a filtration member is provided in the production tank. The silicon containing liquid is stored in the filtration member. The filtration member is dipped in the phosphoric acid aqueous solution stored in the production tank. The silicon containing liquid is permeated through the filtration member, and is mixed with the phosphoric acid aqueous solution.

A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, and a chamber. The substrate rotating mechanism includes an annular rotor part disposed in an internal space of the chamber and a stator part disposed around the rotor part outside the chamber. The substrate holding part is attached to the rotor part in the internal space of the chamber. In the substrate rotating mechanism, a rotating force is generated about a central axis between the stator part and the rotor part. The rotor part is thereby rotated about the central axis, being in a floating state, together with a substrate and the substrate holding part. In the substrate processing apparatus, the substrate can be easily rotated in the internal space having excellent sealability. As a result, it is possible to easily perform single-substrate processing in a sealed internal space.

A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, and a chamber. The substrate rotating mechanism incudes an annular rotor part disposed in an internal space of the chamber and a stator part disposed around the rotor part outside the chamber. The substrate holding part is attached to the rotor part in the internal space of the chamber. In the substrate rotating mechanism, a rotating force is generated about a central axis between the stator part and the rotor part. The rotor part is thereby rotated about the central axis, being in a floating state, together with a substrate and the substrate holding part. In the substrate processing apparatus, the substrate can be easily rotated in the internal space having excellent sealability. As a result, it is possible to easily perform single-substrate processing in a sealed internal space.

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Kyoto, Japan

Toshimitsu Namba