Hitachi-kokusai Electric Inc.

Teitokusha Co., Ltd.

Toshimitsu Miyata

Kenji Tanaka

Masakazu Shimada

Akira Hayashida

Mitsunori Ishisaka

Kimio Kitamura

Masaaki Ueno

Masashi Sugishita

Katsuhisa Kasanami

Jyunichi Nishihara

Shinya Morita

Eisuke Nishitani

Akihiro Sato

Mitsuhiro Hirano

Tomoyuki Matsuda

Mitsunori Takeshita

Koji Shibata

Tetsuya Wada

A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator

The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamberand a transfer chamberrespectively provided in order from the rear side within a case; and a processing chamberprovided above the load lock chamberfor processing wafers. An opening sectionA, and an opening and closing meansA for opening and closing the opening sectionA are respectively provided in a location at the rear side of the transfer chamberwhere the load lock chamberis not arranged.

Substrate processing apparatus and manufacturing method for a semiconductor device

A tubular electrode () and a tubular magnet () are installed on an external section of a processing furnace () for an MMT device. A susceptor () for holding a wafer () is installed inside a processing chamber () of the processing furnace. A gate valve () for conveying the wafer into and out of the processing chamber; and a shower head () for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode () and a heater () are installed inside the susceptor () with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Semiconductor producing device and semiconductor device producing method

Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main bodyof the susceptorof an MMT apparatus is composed of a heater arranging plate, an electrode arranging plate, and a supporting plateall made from quartz. A circular electrode arranging holewith a fixed depth is concentrically formed on the upper surface of the electrode arranging plate, and quadrangular pillarsare formed protruding in a matrix on the bottom of the electrode arranging hole. Multiple insertion holesare formed in a disk-shaped high-frequency electrode, and the high-frequency electrodeis installed in the electrode arranging holeby inserting each pillarinto each insertion hole. The gaps Sa and Sb are provided between the high-frequency electrodeand the electrode arranging plate. The pillarboosts the strength of the electrode arranging plate. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.

Semiconductor manufacturing device and method for manufacturing semiconductor devices

A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices

A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and the enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.

Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure

In a semiconductor device manufacturing method for processing a plurality of substrates by alternately repeating a pretreatment stage and a continuous substrate processing stage, the continuous substrate processing stage comprises the steps of: loading a substrate on a heater unit located at a substrate loading/unloading position, the heater unit supporting and heating the substrate; processing the loaded substrate after transferring the heater unit having thereon the loaded substrate to a substrate processing position; unloading the processed substrate; and repeating the loading step, the processing step and the unloading step until a set of substrates are processed, and wherein the pretreatment stage is carried out by maintaining the heater unit between the substrate loading/unloading position and the substrate processing position.

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Toyama, Japan

Toshimitsu Miyata