Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Takasago International Corporation

Toshimitsu Konuma

Shunpei Yamazaki

Jun Koyama

Takeshi Nishi

Mayumi Mizukami

Yasuhiko Takemura

Michio Shimizu

Akira Mase

Akira Sugawara

Hongyong Zhang

Kunitaka Yamamoto

Kouji Moriya

Mitsunori Sakama

Toshiji Hamatani

Hideki Uochi

Toshiharu Yamaguchi

Yukiko Uehara

Hideomi Suzawa

Hideto Ohnuma

Naoaki Yamaguchi

Takashi Inujima

Minoru Miyazaki

Takahiro Tsuji

Satoshi Murakami

Kazutaka Inukai

Yuji Kawasaki

Ippei Kobayashi

Harumi Mori

Junya Maruyama

Takashi Inushima

Atsunori Suzuki

Satoshi Teramoto

Masaaki Hiroki

Toshio Watanabe

Masahiko Sato

Hiroyuki Sakayori

Akio Osabe

Osamu Aoyagi

Kaoru Tabata

Yoshiharu Hirakata

Tetsuo Tsutsui

Hiroko Yamazaki

Kaoru Koyanagi

Chizuru Isigaki

Seiichi Odaka

Yoshitaka Yamamoto

Masahiro Adachi

Toshimitsu Hagiwara

Toru Takayama

Masahiko Hayakawa

Hitoshi Kondo

Kiyoshi Ogishima

Misako Nakazawa

Mutsuo Yamamoto

Akane Murakami

Masakazu Odaka

Hiroshi Sugiyama

Yasuyoshi Kaise

Yoshimasa Matsushima

Misao Yagi

Itaru Koyama

Shinji Imato

Hiroko Konuma

Mika Tadokoro

Hitoshi Kondou

Michio Shimuzu

Noriaki Kogushi

Chizuru Ishigaki

Mayumi Mizutami

Jun Koyoma

Shunpei Yamzaki

Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode holeis improved. By forming the organic EL material after embedding an insulator in an electrode holeon a pixel electrode and forming a protective portion, failure film formation in the electrode holecan be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

Self-light-emitting device

A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.

EL display device and method for manufacturing the same

A display device has a plurality of pixels which are arranged on a substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter have a second color are provided. The second color is different from the first color.

Display device

By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3&#xd7;10&#x3a9;cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.

Light-emitting organic compound and EL display device utilizing the same

An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFTformed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFThas a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Moreover, the LDD regionof the current control TFTis formed so as to overlap a portion of the gate electrodeto make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.

Electro-optical device and electronic device

To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer () is sandwiched between a transparent electrode () and a cathode (), a film thickness of the EL layer () and a film thickness of the transparent electrode () are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode () and a cover material ().

Self light-emitting device

An object of the present invention is to provide an EL display device having high operation performance and reliability. A third passivation filmis disposed under the EL elementcomprising a pixel electrode (anode), an EL layerand a cathode, and diffusion of alkali metals from the EL elementformed by inkjet method into TFTs is prevented. Further, the third passivation filmprevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL elementby dispersing the heat generated by the EL element

Method for manufacturing an electro-optical device

Self-light-emitting device comprising protective portions on a pixel electrode

An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation filmis disposed under an EL elementwhich comprises a pixel electrode (anode), an EL layerand a cathode, to make a structure in which heat generated by the EL elementis radiated. Further, the third passivation filmprevents alkali metals within the EL elementfrom diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element. More preferably, heat radiating effect is given to a fourth passivation filmto make the EL elementto be enclosed by heat radiating layers.

An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFTformed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFThas a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD regionof the current control TFTis formed so as to overlap a portion of the gate electrodeto make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.

EL display device

An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation filmis disposed so as to be in contact with an EL elementwhich comprises a pixel electrode (anode), an EL layerand a cathode, to make a structure in which heat generated by the EL elementis radiated. Further, the third passivation filmprevents alkali metals within the EL elementfrom diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element. More preferably, heat radiating effect is given to a fourth passivation filmto make the EL elementto be enclosed by heat radiating layers.

An object of the present invention is to provide an EL display device having high operation performance and reliability. A third passivation filmis disposed under the EL elementcomprising a pixel electrode (anode), an EL layerand a cathode, and diffusion of alkali metals from the EL elementformed by ink jet method into TFTs is prevented. Further, the third passivation filmprevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL elementby dispersing the heat generated by the EL element

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Kanagawa, Japan

Toshimitsu Konuma