Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Toshimitsu Kohara

Hiroshi Tamagaki

Yoshimitsu Ikari

Koichiro Akari

Kenji Yamamoto

Toshiki Sato

Eiji Iwamura

In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Method of producing &#x3b1; crystal structure-based alumina films

The present invention provides a process for producing an alumina coating comprised mainly of &#x3b1; crystal structure on a base material.

Process for producing alumina coating composed mainly of &#x3b1;-type crystal structure

Provided is a protective alumina film mainly containing alumina in the &#x3b1;-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Protective alumina film and production method thereof

The present invention provides a method for reactive sputtering in which a reactive sputtering apparatus including a sputtering vaporization sourceprovided with a metal target disposed in a vacuum chamber, a sputtering power sourceto drive the sputtering vaporization source, and an introduction mechanismto introduce an inert gas for sputtering and a reaction gas for forming a compound with sputtered metal into the vacuum chamberis used, and reactive sputtering film formation is performed on a substratedisposed in the above-described vacuum chamber, wherein the method includes the steps of performing constant-voltage control to control the voltage of the above-described sputtering power sourceat a target voltage Vs and, in addition, performing target voltage control at a control speed lower than the speed of the above-described constant-voltage control, the target voltage control operating the above-described target voltage Vs in order that the spectrum of plasma emission generated forward of the above-described sputtering vaporization sourcebecomes a target value.

Reactive sputtering method and device

For forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, a method of producing &#x3b1; crystal structure-based alumina films efficiently includes as an early film formation, forming films under conditions suited for formation of &#x3b1; crystal structure alumina. For example the forming forms films of &#x3b1;crystal structure alumina in a poisoning mode discharge condition only in an early stage of film formation.

Method for preparing alumna coating film having alpha-type crystal structure as primary structure

Provided is a method of producing an alumina film mainly in alpha crystal structure superior in heat resistance, wherein the alumina film mainly in alpha crystal structure is formed on a substrate, independently of the kind of the substrate at relatively low temperature, by treating the substrate surface with a ceramic powder mainly having the crystal structure same as that of alumina in the alpha crystal structure, in forming the alumina film mainly in alpha crystal structure on the substrate (including the substrate having a film previously formed thereon).

Methods of producing an alumina film mainly in alpha crystal structure and the multilayer film thereof

Process for producing an alumina coating comprised mainly of &#x3b1; crystal structure

A multilayered film of the present invention includes a hard film provided on a substrate and including a compound of essential metal components, Al and Ti, with C, N, B, or O, and an intermediate layer formed between the substrate and the hard film, the intermediate layer including at least one selected from the group consisting of a metal, an alloy, and a compound of the metal or the alloy, and having an oxidation temperature lower than that of the hard film. The multilayered film further includes an oxide-containing layer formed by oxidizing the hard film, and an alumina film formed on the surface of the oxide-containing layer. The multilayered film of the present invention has excellent adhesion to the substrate, excellent heat resistance, and excellent oxidation resistance when being exposed to a substrate temperature of 700&#xb0; C. or more and an oxidizing atmosphere.

Multilayered film having excellent wear resistance, heat resistance and adhesion to substrate and method for producing the same

A multilayer coating according to the present invention comprises an alumina coating formed, directly or through an intermediate layer, on a hard coating composed of a metallic compound formed on the base material, and the Vickers hardness of the hard coating after alumina coating formation being 22 GPa or more. The multilayer coating is excellent in adhesion between a hard coating and an alumina coating and capable of exhibiting excellent wear resistance and heat resistance over a long period.

Multilayer coating excellent in wear resistance and heat resistance

Sputter device

A multilayer film formed body comprises an outermost layer comprising a diamondlike carbon film, a substrate comprising an iron material, and an intermediate layer comprising a first layer on the substrate side, and a second layer on the outermost layer side. The first layer comprises at least either metal of Cr and Al, and a second layer comprises an amorphous layer including carbon and at least either metal of Cr and Al. The second layer has a gradient structure where the metal decreases as the position becomes closer to the outermost layer. The hardness of the second layer increases stepwise or continuously as the position becomes closer to the outermost layer. The hardness of the second layer close to the first layer is close to the hardness of the first layer. The hardness of the second layer close to the outermost layer is close to the hardness of the outermost layer.

Multilayer film formed body

This invention provides a magnetron sputtering apparatus for forming a thin film on a substrate by adhering metal atoms or ions evaporated from a magnetron evaporation source to the substrate, which comprises at least one magnetron evaporation source and at least one auxiliary magnetic pole provided on the circumference of the substrate to generate magnetic lines of force surrounding the substrate. According to this invention, only one kind of magnetron magnetic field structure suffices for the magnetron evaporation sources, a desired sealing magnetic field can be formed regardless of the number or arrangement of the magnetron evaporating sources, and the form of the sealing magnetic field can be easily changed.

Growing community of inventors

Takasago, Japan

Toshimitsu Kohara