Honda Motor Co., Ltd.

Toshimitsu Kobori

Shinichi Yataka

Kumiko Yamauchi

A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, a transistor, and a gate shut-off time for the sensing region. The transistor is configured to drive each of the plurality of cells in the main region and each of the plurality of cells in the sensing region. The gate shut-off time for the sensing region is set according to D=(Cgs/Cgm)*(Rgs/Rgm) to be earlier than a gate shut-off time for the main region. D indicates a CR delay ratio, Rgm indicates a gate resistance value for the main region and Rgs indicates a gate resistance value for the sensing region in the transistor, and Cgm indicates a parasitic capacitance for the main region and Cgs indicates a parasitic capacitance for the sensing region in the transistor.

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Wako, Japan

Toshimitsu Kobori