Shin-etsu Chemical Co., Ltd.

Shin-estu Chemical Co., Ltd.

Nissin Chemical Industry Co., Ltd.

Toshimi Kobayashi

Yoshihiro Kubota

Makoto Kawai

Kinya Ogawa

Hiroshi Mogi

Shinji Kojima

Kazuyoshi Tamura

Keiichi Goto

Kenichi Arai

Yoshikazu Ohtani

Ryuichi Shin-Etsu Chem Co Ltd Saguchi

Tatsuya Shin-Etsu Chem Co Ltd Hojo

Hiroshi Yokoyama

Kouji Kinoshita

Takehiko Shin-Etsu Chem Co Ltd Fukumoto

There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5&times;10 atoms/cm and not more than 1.5&times;10 atoms/cm , and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5&times;10 atoms/cm and not more than 5&times;10 atoms/cm . There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.

Silicon electrode plate

There is disclosed an electrostatic holding apparatus in which a voltage is applied to an conductive electrode covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The main component of the insulating dielectric layer is ceramic containing 0.1-30 wt. % of an atomic metal, and the volume resistivity of the metal-containing ceramic at 20&deg; C. is 10  &OHgr;&middot;cm. The metallic element is Mo or W. In the electrostatic holding apparatus, since the volume resistivity of an insulating dielectric layer of an electrostatic attraction portion is decreased, a strong electrostatic force can be generated. Also, there can be maintained the capability of allowing removal of an object at the time of stopping application of voltage. Further, since neither fine cracks nor pores remain in the insulating dielectric layer after sintering, the withstand voltage is high.

Electrostatic holding apparatus having insulating layer with enables easy attachment and detachment of semiconductor object

There is disclosed an electrostatic holding apparatus in which a voltage is applied to an electrode formed of a conductive layer disposed on an insulator layer and covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The electrostatic holding apparatus is formed of a sintered body in which a thermal expansion mitigating layer is disposed between the insulating dielectric layer and the conductive layer and/or between the conductive layer and the insulator layer. The insulating dielectric layer, the conductive layer, the insulator layer, and the thermal expansion mitigating layer are superposed and press-formed in an unfired state to obtain a green body, which is then sintered to obtain the sintered body. An insulating dielectric layer, a conductive layer and an insulator layer are united while differences in coefficient of thermal expansion among these layers are minimized in order to prevent generation of inter-layer delamination, cracks, and the like, and in order to prevent generation of distortion or warping on the electrostatic attraction surface to thereby increase the electrostatic attraction force. Further, the electrostatic holding apparatus has an excellent capability of allowing removal of an object at the time of stopping application of voltage and an increased withstand voltage.

Electrostatic holding apparatus and method of producing the same

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Annaka, Japan

Toshimi Kobayashi