Fujitsu Corporation

Other

Kyushu Fujitsu Electronics Limited

Fujitsu Vlsi Limited

Fujistsu Limited

Toshimi Kawahara

Junichi Kasai

Mitsunada Osawa

Yoshiyuki Yoneda

Takashi Hozumi

Shinya Nakaseko

Mayumi Osumi

Shigeyuki Maruyama

Hirohisa Matsuki

Norio Fukasawa

Kenichi Nagashige

Shinichirou Taniguchi

Yoshitugu Katoh

Hiroyuki Ishiguro

Kazuto Tsuji

Ryuji Nomoto

Masanori Onodera

Yasuhiro Shinma

Yukio Takigawa

Toshiyuki Motooka

Mitsutaka Sato

Eiji Yoshida

Toshio Hamano

Naoyuki Watanabe

Hideharu Sakoda

Tetsuya Fujisawa

Toshiyuki Honda

Yoshihiro Kubota

Daisuke Koizumi

Masayuki Tanaka

Yuzo Hamanaka

Yoshito Konno

Mamoru Suwa

Kenji Itasaka

Terumi Kamifukumoto

Yuji Sakurai

Yasuaki Tsutsumi

Syuichi Monma

Sinya Nakaseko

Michio Sono

Masashi Takenaka

Muneharu Morioka

Masao Sakuma

Kaoru Hashimoto

Masamitsu Ikumo

Masayuki Ochiai

Masaaki Seki

Yoshimi Suzuki

Shigeaki Yagi

Tetsuya Mieda

Hiroyuki Ishiquro

Hiroaki Hayashi

A method includes a resin sealing step of placing, in a cavityof a mold, a substrateto which semiconductor elementson which bumpsare arranged, a resin sealing step of supplying resinto positions of the bumpsso that a resin layersealing the bumpsis formed, a protruding electrode exposing step of exposing at least ends of the bumpssealed by the resin layerso that ends of the bumpsare exposed from the resin layer, and a separating step of cutting the substratetogether with the resin layerso that the semiconductor elementsare separated from each other.

Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device

A probe card for testing a wafer having formed a plurality of semiconductor chips, the probe card including a board and a multi-layer substrate. The probe card may also include a flexible substrate. A contact electrode, located opposite from an electrode on one of the chips, is disposed above or below the flexible substrate, or may be provided on an elastic material on the multi-layered substrate. A first wiring has a first portion connected to the contact electrode, a level transitioning portion extending from a level of the first portion to the multi-layer substrate at a lower level, and a connecting terminal at an end of the level transitioning portion connected to an internal terminal on the multi-layered substrate. A second wiring in the multi-layered substrate connects the internal terminal to an external terminal at a periphery of the multi-layer substrate. A third wiring on the board connects the external terminal on the multi-layer substrate to an external connecting terminal on the board. Displacements of the internal terminal resulting from the temperature load applied during testing of the wafer are compensated by the level transitioning portion of the first wiring. Unevenness involved with the contact between the contact electrodes on the probe card and the electrodes on the chips are compensated by the contact electrodes and/or elastic material. An electrode pitch of the contact electrodes is expanded by the first wiring.

Probe card and method of testing wafer having a plurality of semiconductor devices

A semiconductor module includes a plurality of semiconductor devices each including a circuit substrate carrying thereon a single memory semiconductor chip and a socket for holding the semiconductor devices detachably.

Semiconductor module including a plurality of semiconductor devices detachably

Resin composition for sealing semiconductor devices, which contains a filler (A) of spherical fused silica having maximum particle size of not larger than 45 &mgr;m and may contain metal impurities having a particle size of not larger than 53 &mgr;m; and a semiconductor device sealed with the resin composition.

Semiconductor-sealing resin composition and semiconductor device using it

A semiconductor device includes a semiconductor element, a resin package sealing the semiconductor element, resin projections protruding downward from a mounting surface of the resin package, metallic film portions provided to the resin projections, and connecting members electrically connecting the semiconductor elements to the metallic film parts. Outer circumference surfaces of the resin package are upright surfaces defined by cutting.

Semiconductor device, method for fabricating the semiconductor device, lead frame and method for producing the lead frame

A probe card for testing a wafer having formed a plurality of semiconductor chips, the probe card including a board and a multi-layer substrate. The probe card may also include a flexible substrate. A contact electrode, located opposite from an electrode on one of the chips, is disposed above or below the flexible substrate, or may be provided on an elastic material on the multi-layered substrate. A first wiring has a first portion connected to the contact electrode, a level transitioning portion extending from a level of the first portion to the multi-layer substrate at a lower level, and a connecting terminal at an end of the level transitioning portion connected to an internal terminal on the multi-layered substrate. A second wiring in the multi-layered substrate connects the internal terminal to an external terminal at a periphery of the multi-layer substrate. A third wiring on the board connects the external terminal on the multi-layer substrate to an external connecting terminal on the board. Displacements of the internal terminal resulting from the temperature load applied during testing of the wafer are compensated by the level transitioning portion of the first wiring. Unevenness involved with the contact between the contact electrodes on the probe card and the electrodes on the chips are compensated by the contact electrodes and/or elastic material according to the present invention. An electrode pitch of the contact electrodes is expanded by the first wiring.

A semiconductor device includes a semiconductor chip, a resin package for sealing said semiconductor chip, metal layers provided on a mounting-side surface of said resin package in an exposed manner and connecting members for electrically connecting electrode pads provided on the semiconductor chip and the metal layers. The metal layers are provided with stud bumps on the mounting side, the stud bumps serving as external connection terminals.

Semiconductor device including stud bumps as external connection terminals

A method of producing semiconductor devices which have an excellent separability from a metal mold after resin encapsulation and thus eliminates the need to clean the metal mold. A metal mold for producing such semiconductor devices is also provided. According to the method of the present invention, the metal mold is first opened, and two separation sheets are disposed on dividing surfaces including cavity forming surfaces of a first metal mold and a second metal mold. A substrate is then placed on one of the separation sheets, with its semiconductor chip formed surface facing the second metal mold. An encapsulation resin is provided on the substrate placed on one of the separation sheets. The metal mold in a heated state is closed and pressed to form a resin layer for encapsulating electrodes formed on the substrate. The metal mold is again opened, and the resin-encapsulated substrate is taken out of the metal mold. After the separation sheets are removed, the substrate is divided into individual semiconductor devices.

Method of producing semiconductor devices having easy separability from a metal mold after molding

A semiconductor device is provided, which device includes a semiconductor chip including external terminals formed on a surface thereof and a sealing resin formed on the surface of the semiconductor chip. A contaminant film formed on the surface of said semiconductor chip has a laser-processed edge so that a peripheral portion of the surface of said semiconductor chip is bonded to the sealing resin.

Semiconductor device having increased reliability and method of producing the same and semiconductor chip suitable for such a semiconductor device and method of producing the same

In a semiconductor device of the present invention and a production method thereof, an electronic circuit is provided in a semiconductor substrate, the electronic circuit having terminals. An internal wiring pattern is provided in the substrate, the internal wiring pattern being connected to the electronic circuit terminals. A protective layer is provided on the substrate, the protective layer covering the substrate. Vias are provided on the substrate so as to project from the protective layer, the vias being connected to the internal wiring pattern at arbitrary positions on the substrate. An external wiring pattern is provided on the protective layer, the external wiring pattern being connected to the vias. Projection electrodes are connected to the external wiring pattern, the projection electrodes having a predetermined height above the external wiring pattern. An enclosure layer of a resin material is provided on the protective layer, the enclosure layer covering sides of the projection electrodes and external surfaces of the external wiring pattern.

Semiconductor device and method of production of the semiconductor device

A semiconductor device is provided, which device includes a semiconductor substrate including a plurality of signal pads and ground pads, an insulating film formed on the semiconductor substrate, a conductive metal film formed on the insulating film and electrically connected to the ground pads and a plurality of first interconnection lines electrically connected to the signal pads and insulated from the conductive metal film. The conductive metal film is formed over a region including the first interconnection lines in a plan view of the semiconductor device.

Semiconductor device having improved electrical characteristics and method of producing the same

A semiconductor device includes a semiconductor element, a holding substrate holding the semiconductor element, a frame body provided on the holding substrate so as to surround the semiconductor element and having a hole which communicates to a space formed between the holding substrate and the frame body and the frame body and the holding substrate form a housing, a plurality of leads having inner lead portions connected to the semiconductor element and outer lead portions extending outside the frame body, and a resin filling the space and encapsulating the semiconductor element and the inner lead portions. All of the outer lead portions extend outside the housing from one side of the housing.

Semiconductor device and method of producing the same and semiconductor device unit and method of producing the same

A semiconductor device includes a semiconductor element, a resin package sealing the semiconductor element, resin projections protruding downward from a mounting surface of the resin package, metallic film portions provided to the resin projections, and connecting members electrically connecting the semiconductor elements to the metallic film parts.

A sealed semiconductor chip having a surface film of a sealed resin composition, wherein the resin composition has a linear expansion coefficient of 60&times;10 /K or less at a temperature equal to or less than its glass transition point and 140&times;10 /K or less at a temperature equal to or higher than its glass transition point; a semiconductor-sealing resin composition for sealing a semiconductor chip, which has a linear expansion coefficient of 60&times;10 /K or less at a temperature equal to or less than its glass transition point and 140&times;10 /K or less at a temperature equal to or higher than its glass transition point; the sealed semiconductor chip is chip size and has high reliability; the semiconductor-sealing resin composition creates a good seal on chip wafers and has high reliability; and the chip wafers sealed with a surface film of the resin composition warp little.

Semiconductor device and method for fabricating it, and semiconductor sealing resin composition

Growing community of inventors

Kawasaki, Japan

Toshimi Kawahara