Sekisui Chemical Co., Ltd.

Toshimasa Takeuchi

Setsuo Nakajima

Koichiro Iwasa

Osamu Nishikawa

Makoto Fujigami

Seigo Ono

Naomichi Saito

A hydroponic system () using seawater, wherein seawater (W) is used for hydroponic cultivation of salt-tolerant plants, including a water supply pump () that pumps up, from the sea (S), seawater (W) having a salinity, a bacteria content and an unwanted matter content are less than or equal to predetermined threshold values; a water tub () that stores seawater (W) pumped up by the water supply pump () and accommodates salt-tolerant plants (P) to be cultivated; and a filter () that removes bacteria and unwanted matter from the seawater (W) obtained from the sea (S); wherein the seawater (W) from which the bacteria and the unwanted matter have been removed by the filter () is fed to the water tub ().

Hydroponic system using seawater and cultivation system for growing seeds and seedlings

The present invention provides a plant cultivation method, which enables plant cultivation under high salinity environment for a long time. A method for hydroponic plant cultivation under high salinity environment, comprising a cultivation step of hydroponically growing a plant with a cultivation solution having a sodium chloride concentration of 1% by mass or more, during which a salt resistance imparting treatment is performed at least once by bringing a salt tolerance imparting agent into contact with at least a part of a root of the plant, thereby maintaining salt tolerance of the plant.

Hydroponic culture method for plant in high salinity environment

To provide a plasma processing apparatus capable of enhancing insulation between an electrode and a casing and adjusting the temperature of the electrode from outside. An electrodeis provided at its discharge space forming surface with a solid dielectric. The electrodeis received in a casingsuch that the solid dielectricon the discharge space forming surface is exposed. An in-casing spacebetween the casingand the electrodedisposed in the casingis filled with substantially pure nitrogen gas. This nitrogen gas pressure is more increased than the pressure in the discharge space. Preferably, nitrogen gas is allowed to flow.

Plasma processing apparatus

To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus. The bottom part of a casingof processing unitsL,R is open, this opening part is closed with a solid dielectric plate, and an electrodeis received in the casingsuch that the electrodeis free in the longitudinal direction. The solid dielectric platehas such strength as capable of supporting the dead weight of the electrodesolely by itself. The electrodeis placed on the upper surface of the solid dielectric plateis a non-fixed state such that the dead weight of the electrodeis almost totally applied to the solid dielectric plate

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Tsukuba, Japan

Toshimasa Takeuchi