Taiyo Yuden Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Toshimasa Suzuki

Daigo Ito

Masaki Mochigi

Jun Ogasawara

Keizo Kawamura

Chie Kawamura

Hidetoshi Masuda

Nobuyoshi Awaya

Yukio Tamai

Masayuki Fujimoto

Hidechika Kawazoe

Masataka Tomita

Naoto Hagiwara

Yuji Nishi

Hideo Ando

Keizo Sakiyama

Shinji Kobayashi

Atsushi Tanada

Yoshiki Iwazaki

Kentaro Morito

Kohji Inoue

Atsushi Shimaoka

Chiharu Hayashi

Keiko Shiroki

Yuji Matsushita

Akitoshi Wagawa

Shoichi Sekiguchi

A winding-type coil component whose core member is constituted by: soft magnetic alloy grainscontaining Fe, Si, and at least one of Cr and Al, as constituent elements; and an oxide layerwhich is formed around the soft magnetic alloy grains to bond the soft magnetic alloy grains together and contains Si, as well as at least one of Cr and Al, as constituent elements, and whose content of Si based on mass is higher than the total content of Cr and Al. The winding-type coil component has high mechanical strength.

Winding-type coil component and method for manufacturing same, as well as circuit board carrying winding-type coil component

In an exemplary embodiment, a coil component includes: an element body partthat is formed containing a magnetic material; a coilthat is embedded within the element body partand constituted by a wound conductive wire; lead wiresthat are extended from the conductive wire and are led out from the coil; and terminal partsthat are joined to the lead wires; wherein tip partsof the lead wires, each having a prescribed length from the tip, are embedded in the element body partand also extend along the bottom faceof the element body part, and the terminal partsare joined to the tip partsof the lead wireson the bottom faceof the element body part

Coil component and electronic device

A coil component, adopted to be mounted on an electronic device, includes: an element body part; a coil fixed to the element body part and constituted by a wound conductive wire; lead wires that are each extended from the conductive wire and led out from the coil, and whose tip parts are each disposed a bottom face, which is a mounting face, of the element body part; and terminal parts that are each constituted by the tip part and a metal member that is joined to the tip part on the bottom face, and also has an opening at a position overlapping the tip part in a direction intersecting the bottom face.

In an exemplary embodiment, a coil component includes: an element body part; a coilembedded within the element body partand constituted by a wound conductive wire; lead wiresthat are each extended from the conductive wire and led out from the coil, and whose tip partsare each fixed to a bottom faceof the element body part; and terminal partsthat are each constituted by the tip partorand a metal memberorthat is joined to the tip partoron the bottom face, and also has an openingorat a position overlapping the tip partorin a direction intersecting the bottom face

To provide an electronic component having printing, which can achieve both of a moisture resistance capability and visibility of printing, and a method of manufacturing the same. A method of manufacturing an electronic component having printing, including preparing an electronic component before being subjected to printing, which is provided with a magnetic element body made of an alloy magnetic material containing a transition metal on a surface thereof, and a glass layer that contains Bi with which the magnetic element body is at least partly coated and does not contain a transition metal, and irradiating the electronic component before being subjected to printing with laser light having a wavelength of 1064 nm so that the laser light is transmitted through the glass layer, so that a printing portion is formed at a partial glass portion in a vicinity of an interface between the magnetic element body and the glass layer.

Electronic component having printing and method of manufacturing the same

An all-solid-state secondary battery, including: a solid electrolyte layer; a positive electrode layer including a positive electrode active material layer and a first current collector layer; a negative electrode layer including a second current collector layer, the positive electrode layer and the negative electrode layer sandwiching the solid electrolyte layer; and external electrodes connected respectively to the first current collector layer and the second current collector layer, wherein the positive electrode active material layer is formed of an olivine-type active material, wherein the solid electrolyte layer is formed of a phosphate having a NASICON-type structure, and wherein the solid electrolyte layer contains particulate precipitate having an olivine-type crystal structure that includes a same element as an element forming the positive electrode active material layer.

All-solid-state secondary battery and method for manufacturing same

All-solid-state secondary battery with solid electrolyte layer containing particulate precipitate of an olivine-type crystal structure

A lithium-titanium complex oxide containing LiTiOis characterized in that, based on SEM observation, the number-based percentage of particles whose size is less than 0.1 &#x3bc;m is 5 to 15% or 40 to 65%, the number-based percentage of particles whose size is 0.3 to 1.5 &#x3bc;m is 15 to 30%, the specific surface area measured by the BET method is 5.8 to 10.1 m/g, and the average particle size D50 according to the particle size distribution measured by laser diffraction measurement is preferably 0.6 to 1.5 &#x3bc;m.

Lithium-titanium complex oxide, and battery electrode and lithium ion secondary battery using same

A lithium-titanium complex oxide whose total water generation amount and total carbon dioxide generation amount measured by thermal decomposition GC-MS are preferably 1500 wt ppm or less and 2000 wt ppm or less, respectively, is obtained by subjecting a mixture of titanium compound and lithium compound to a heat treatment at 600&#xb0; C. or above, cooling the obtained reaction product to 50&#xb0; C. or below, and then subjecting the cooled reaction product to a reheat treatment involving heating to the maximum temperature of 300 to 700&#xb0; C. and then cooling, wherein the dew point of the ambience of the reheat treatment is controlled at &#x2212;30&#xb0; C. or below at a temperature of 200&#xb0; C. or above.

Lithium-titanium complex oxide and manufacturing method thereof, and battery electrode using same

A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, PrCaMnO, that has been formed at a film forming temperature from 350&#xb0; C. to 500&#xb0; C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

Nonvolatile semiconductor memory device

In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.

Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure

There is provided an EPIR device which is excellent in mass productivity and high in practical utility. The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin filmforming the lower electrode layer includes columnar Pt crystal grainsA,B,C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groupsA,B,C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grainsA,B,C, . . . . Then, the crystal faces of the crystal grains included in the PCMO crystal grain groupsA,B,C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0), (1 1 0)and (1 1 1)planes.

Growing community of inventors

Takasaki, Japan

Toshimasa Suzuki