Shin-etsu Chemical Co., Ltd.

Nihon Shinku Gijutsu Kabushiki Kaisha

Toshimasa Okamura

Kazuhiko Urano

Toshihiko Shindoh

Masatoshi Sato

Tetsuo Suzuki

Takeshi Kakegawa

A silicon oxide depositing source is a mixture of a metallic silicon powder and a silicon dioxide powder. Both the powders are finely divided to a mean particle size of up to 20 .mu.m. They are mixed to give an oxygen to silicon atom ratio between 1.2:1 and 1.7:1. The source is adapted to be evaporated by an electron beam heating technique, allows the power of an electron beam to be increased without a splash phenomenon, and eventually deposits a silicon oxide thin film having transparency and improved barrier properties.

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Annaka, Japan

Toshimasa Okamura