Sony Corporation

Sumitomo Electric Industries, Limited

Toshimasa Kobayashi

Tsuyoshi Tojo

Takashi Yamaguchi

Osamu Matsuda

Takashi Kobayashi

Satoru Kijima

Shuji Sato

Kensaku Motoki

Kenji Shinozaki

Hiroji Kawai

Hideki Hirano

Satoshi Tomioka

Takayuki Fujioka

Shinichi Ansai

Masato Doi

Hiroshi Nakajima

Katsunori Yanashima

Tomonori Hino

Norikazu Nakayama

Tsunenori Asatsuma

Kazuhiko Nemoto

Takeharu Asano

Shunji Imanaga

A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

When a semiconductor light emitting device or a semiconductor device is produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion () formed on a sapphire substrate () and having a mask () on one side surface thereof, and a GaN layer () grown on the sapphire substrate () and the seed crystal portion () through epitaxial lateral overgrowth. The GaN layer () is grown only from an exposed side surface of the seed crystal portion () which is not covered with the mask (), so the lateral growth of the GaN layer () is asymmetrically carried out. Thereby, a meeting portion () is formed in the vicinity of a boundary between the seed crystal portion () and the mask () in a thickness direction of the GaN layer (). Therefore, as the meeting portion () is formed in a position away from the center between the adjacent seed crystal portions () in a direction parallel to a surface of the substrate, a width Wof a lateral growth region is larger with respect to a pitch Wof the seed crystal potion (), compared with conventional configurations.

Nitride semiconductor device and method of manufacturing the same

The nitride-based semiconductor laser devicehas a stacked structure comprising a first contacting layer, a first cladding layer, an active layer, a second cladding layer, a second contacting layerand a second electrodewhich are consecutively stacked, the second cladding layercomprises a lower layerA and an upper layerB, the first cladding layer, the active layerand the lower layerA of the second cladding layer have a mesa structure, the upper layerB of the second cladding layer and the second contacting layerhave a ridge structure, an insulating layercovering at least part of each of both side surfaces of the upper layerB of the second cladding layer is formed on the portions of the lower layerA of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layerhaving substantially the same width as the mesa structure is formed on the top surface of the insulating layerand the top surface of the second electrodesuch that the metal layercontinues from one top surface to the other.

Nitride-based semiconductor laser device and method for the production thereof

The nitride-based semiconductor laser device has a stacked structure comprising a first contacting layer , a first cladding layer , an active layer , a second cladding layer , a second contacting layer and a second electrode which are consecutively stacked, the second cladding layer comprises a lower layer A and an upper layer B, the first cladding layer , the active layer and the lower layer A of the second cladding layer have a mesa structure, the upper layer B of the second cladding layer and the second contacting layer have a ridge structure, an insulating layer covering at least part of each of both side surfaces of the upper layer B of the second cladding layer is formed on the portions of the lower layer A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer having substantially the same width as the mesa structure is formed on the top surface of the insulating layer and the top surface of the second electrode such that the metal layer continues from one top surface to the other.

A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

Semiconductor light emitting device and its manufacturing method

It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate . In selective locations other than the location of a ridge stripe portion and a mesa portion along a portion of a semiconductor layer where a cavity edge should be made, namely, in locations at opposite sides of the mesa portion , stripe-shaped cleavage-assist grooves are made to extend in parallel to the ( )-oriented surface of the semiconductor layer , and the semiconductor layer and the sapphire substrate are cleaved from the cleavage-assist groove to make the cavity edge made up of the cleavable surface of the semiconductor layer

Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device

It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate In selective locations other than the location of a ridge stripe portion and a mesa portion along a portion of a semiconductor layer where a cavity edge should be made, namely, in locations at opposite sides of the mesa portion stripe-shaped cleavage-assist grooves are made to extend in parallel to the (11-20)-oriented surface of the semiconductor layer and the semiconductor layer and the sapphire substrate are cleaved from the cleavage-assist groove to make the cavity edge made up of the cleavable surface of the semiconductor layer

In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discrete pellets. A GaN semiconductor laser chip, thus obtained, is assembled on a package.

Manufacturing method for nitride III-V compound semiconductor device using bonding

It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer,made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate,In selective locations other than the location of a ridge stripe portion,and a mesa portion,along a portion of a semiconductor layer,where a cavity edge,should be made, namely, in locations at opposite sides of the mesa portion,stripe-shaped cleavage-assist grooves,are made to extend in parallel to the (,-,)-oriented surface of the semiconductor layer,and the semiconductor layer,and the sapphire substrate,are cleaved from the cleavage-assist groove,to make the cavity edge,made up of the cleavable surface of the semiconductor layer

A heterojunction field effect transistor realizing a high performance by a significant decrease. in source resistance while maintaining a sufficiently high gate resistivity to voltage is provided. Sequentially stacked on a c-face sapphire substrate via a buffer layer are an undoped GaN layer, undoped Al.sub.0.3 Ga.sub.07 N layer, undoped GaN channel layer, undoped Al.sub.0.15 Ga.sub.0.85 N spacer layer, n-type Al.sub.0.15 Ga.sub.0.85 N electron supply layer, graded undoped Al.sub.z Ga.sub.1-z N barrier layer and n-type Al.sub.0.06 Ga.sub.0.94 N contact layer, and a gate electrode, source electrode and drain electrode are formed on the n-type Al.sub.0.06 Ga.sub.0.94 N contact layer to form a AlGaN/GaN HEMT. The Al composition z in the graded undoped Al.sub.z Ga.sub.1-z N barrier layer continuously decreases from 0.15 to 0.06, for example, from the n-type Al.sub.0.15 Ga.sub.0.85 N electron supply layer toward the n-type Al.sub.0.06 Ga.sub.0.94 N contact layer. An n.sup.++ -type GaN contact layer may be formed on the n-type Al.sub.0.06 Ga.sub.0.94 N contact layer in the region for the source electrode and the drain electrode, and the source electrode and the drain may be formed on it.

Heterojunction field effect transistor

A surface-emission semiconductor light-emitting device package can radiate heat from the front surface while emitting light to the front surface of the device. The package includes a semiconductor light-emitting device for emitting light to a semiconductor substrate in the upper direction and a package window portion formed of a transparent heat sink, wherein the semiconductor light-emitting device is bonded to the package window portion in accordance with an interconnection pattern. A method of manufacturing semiconductor light-emitting device package also is described.

Semiconductor light-emitting device package and method of manufacturing

A recording unit structure comprising a recording material layer faced to a recording body with a space incorporated therebetween, so that said recording material is vaporized and transferred to said recording body through said space, provided that pores are provided to a vaporizing portion of the recording material in such a manner that the pores be present within the layer of the recording material. The recording unit structure of the present invention assures a recording of excellent quality, is made compact and light weight, yields a high thermal efficiency, and produces no used ink sheets and other wastes. The present invention also relates to a recording device comprising the same.

Recording unit structure and recording device

An ohmic electrode and a process for fabricating the same, said process comprising forming a first metallic layer comprising indium or an indium alloy on a compound semiconductor layer, forming a second metallic layer comprising a gold-germanium alloy on said first metallic layer, and subjecting the first and the second metallic layer thus obtained to alloying treatment. The present invention provides favorable ohmic contacts by effecting the alloying treatment at a relatively low temperature of 350.degree. C. or even lower.

Growing community of inventors

Kanagawa, Japan

Toshimasa Kobayashi