Murata Manufacturing Co., Ltd.

Toshimaro Yoneda

Michio Kadota

Koji Fujimoto

Takeshi Nakao

Katsumi Fujimoto

Hideya Horiuchi

Takuo Hada

Makoto Tose

Eiichi Takata

Yasuji Yamamoto

Masatoshi Nakagawa

Yuichi Takamine

Shinsuke Ikeuchi

Yoshihiro Koshido

Masato Kobayashi

Noriyoshi Ota

Yoshitaka Matsuki

Toshio Hagi

Naoyuki Endo

Katsuya Daimon

Naoki Mizoguchi

Junya Ago

Akira Michigami

Yasuharu Nakai

Tsuguji Kambayashi

Sunao Yamazaki

Daisuke Tamazaki

Takeshi Nadota

An elastic wave device includes a piezoelectric substrate, elastic wave resonators on or in the piezoelectric substrate, and a dielectric film disposed on the piezoelectric substrate and covering the elastic wave resonators. The elastic wave resonators includes respective IDT electrodes on the piezoelectric substrate. When a wavelength specified by an electrode finger pitch of the IDT electrode is denoted as &#x3bb;, at least two of the elastic wave resonators have the different wavelengths. In two of the elastic wave resonators having different wavelengths, a film thickness of the IDT electrode in the elastic wave resonator having the longer wavelength is not greater than that of the IDT electrode in the elastic wave resonator having the shorter wavelength. Film thicknesses of the IDT electrodes in at least two of the elastic wave resonators are different from each other. The elastic wave device utilizes a Rayleigh wave.

Elastic wave device

A multiplexer includes filters and a common terminal connected to an antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal. A terminal closer to the antenna element among an input terminal and an output terminal of one filter among the filters is connected to a parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween. A terminal closer to the antenna element among an input terminal and an output terminal of each of other filters other than the one filter among the filters is connected to the common terminal and a series resonator.

Multiplexer, transmission apparatus, and reception apparatus

A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (KNa)NbO-nCaTiO, wherein m, n, and x in the general formula are within the ranges of 0.87&#x2264;m&#x2264;0.97, 0&#x2264;n&#x2264;0.065, and 0&#x2264;x&#x2264;1.

Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

A multiplexer includes a common terminal, a reception terminal, and transmission terminals; a reception filter between the common terminal and the reception terminal; a transmission filter between the common terminal and the transmission terminal; a transmission filter between the common terminal and the transmission terminal; a first inductor connected in series between the common terminal and the reception filter; a second inductor connected between the transmission terminal and the transmission filter; and a third inductor connected between the transmission terminal and the transmission filter. The first inductor and the second inductor couple with each other through a magnetic field, and the first inductor and the third inductor couple with each other through a magnetic field.

Multiplexer, high-frequency front end circuit, and communication device

A piezoelectric thin film contains potassium sodium niobate represented by general formula (KNa)NbOand CaTiO, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 &#x212b; or less, and the ratio I/Iof the diffraction peak intensity Iof the (101) plane to the diffraction peak intensity Iof the (001) plane in the X-ray diffraction profile of the piezoelectric thin filmsatisfies the relationship log(I/I)&#x2264;&#x2212;2.10.

Piezoelectric thin film and piezoelectric thin film device

A vibrator in a vibrating gyroscope includes a circular annular portion, a rectangular annular portion, and joining portions. The rectangular annular portion is disposed adjacent to an outer side of the circular annular portion. The joining portions join the circular annular portion and the rectangular annular portion. The rectangular annular portion includes linear beam portions. The joining portions join the circular annular portion and the center portions of the beam portions to each other.

Vibrator and vibrating gyroscope

A weight member includes two sides opposite to each other in an X-axis direction when looked at in a plan view. A vibrating beam includes one end portion connected at one location to a fixation member and the other end portion connected at one location to one of the two sides of the weight member in the X-axis direction when looked at in a plan view. The vibrating beam supports the weight member to be displaceable in the X-axis direction. A holding beam includes one end portion connected at one location to the fixation member and the other end portion connected at one location to the other of the two sides of the weight member opposing to each other in the X-axis direction when looked at in a plan view. The holding beam supports the weight member to be displaceable in the X-axis direction. A driver is disposed on the vibrating beam and vibrates the vibrating beam. A detector is disposed on the vibrating beam and configured to output a detection signal changes according to deformation of the vibrating beam.

Acceleration sensor

An acceleration sensor includes a fixation member, a weight member including a plate with two opposing sides parallel or substantially parallel to an X-direction and two opposing sides parallel to a Y-axis direction in a plan view, the weight member including a cutout extending in a direction about 45&#xb0; relative to the X and Y axis directions, a vibrating beam linearly extending in the direction about 45&#xb0; relative to the X and Y axis directions in the plan view, and one end portion is connected to the fixation member and the other end portion is connected to the weight member, the vibrating beam is partly arranged within the cutout and supporting the weight member to be displaceable in a Z-axis direction, a driver disposed on the vibrating beam and vibrating the vibrating beam, and a detector disposed on the vibrating beam and outputting a detection signal that is changed depending on deformation of the vibrating beam.

A vibrator includes first and second circular or substantially circular arc-shaped beam portions, a base end-side weight portion, and a base end-side weight portion joining portion. The end portions of the first and second circular or substantially circular arc-shaped beam portions in an X-axis positive direction face each other across a distance in a Y-axis direction, and the end portions thereof in an X-axis negative direction are joined to each other. The base end-side weight portion is disposed between the first and second circular or substantially circular arc-shaped beam portions. The base end-side weight portion joining portion extends from a joining portion between the first circular or substantially circular arc-shaped beam portion and the second circular or substantially circular arc-shaped beam portion in the X-axis positive direction, and joined to the base end-side weight portion.

A vibration gyro element that includes a piezoelectric substrate configured to have a shape that is line-symmetrical about each of the two detection axes Xand Xwhich are parallel to a principal surface and orthogonal to each other; and a plurality of pairs of principal surface electrodes which are provided on front and back principal surfaces of the piezoelectric substrate. The piezoelectric substrate is formed from a monocrystal classified into the trigonal system 3m point group, and a crystal axis X of a crystal coordinate system (X, Y, Z) coincides with an axis that equally divides between the two detection axes Xand X.

Vibration gyro element

A vibrating gyro device includes a piezoelectric substrate, an upper main surface electrode, a lower main surface electrode, and a support substrate. The piezoelectric substrate is provided with inner open holes and outer open holes. Side edge surfaces of a frame-shaped region in the X-Y plane are exposed to the interior of the frame through the inner open holes. Side edge surfaces of the frame-shaped region are exposed to the exterior of the frame through the outer open holes. Drive detection electrodes arranged within the upper main surface electrode are bonded to the upper main surface of the frame-shaped region and together with the lower main surface electrode are electromechanically coupled with deformation of the frame-shaped region in the Z-axis direction and deformation of the frame-shaped region in a direction parallel or substantially parallel to the X-Y plane. The support substrate provides a vibration space for the frame-shaped region and supports the piezoelectric substrate. The vibration space prevents interference between the frame-shaped region and the support substrate and connects the inner open holes and the outer open holes.

Vibrating gyro device and manufacturing method therefor

A surface acoustic wave device includes a piezoelectric substrate and at least one interdigital electrode disposed on the piezoelectric substrate. The interdigital electrode is made of &#x3b1;-tantalum.

Method of manufacturing a surface acoustic wave device

A surface acoustic wave device has first and second surface acoustic wave filter elements which are arranged on a surface acoustic wave substrate so as to define a filter device having a two-stage configuration. A free surface portion is provided by forming a perforation in an inter-stage connecting portion connecting the first and second surface acoustic wave filter elements.

Surface acoustic wave device

In a method of manufacturing a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/&#x3bb; of the IDT are controlled such that ripple caused by a transversal mode wave is about 1.5 dB or less, where 'h' indicates the film thickness of the electrodes and 'h' indicates the wavelength of a surface acoustic wave.

Growing community of inventors

Ishikawa-ken, Japan

Toshimaro Yoneda