Other

Canon Kabushiki Kaisha

Shin-etsu Handotai Co., Ltd.

Toshikuni Shinohara

Nobuyoshi Tanaka

Masaki Hirayama

Tadahiro Ohmi

Nobumasa Suzuki

Hiroshi Ohsawa

Yasuyuki Shirai

Takahisa Nitta

Kazuhide Ino

Hiroshi Osawa

Takeo Ushiki

Shigetoshi Sugawa

Koichi Kanaya

Tatsuo Ito

The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.

Single crystal cutting method

A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outletand a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

Laser gas supply path structure in an exposure apparatus

In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

Laser oscillating apparatus, exposure apparatus using the same and device fabrication method

A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

Gas supply path structure for a gas laser

An excimer laser gas in a laser tube is excited by a microwave introduced from awaveguide , and electric field concentration occurs in a slit-shaped gap provided in a plate member , causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

Laser oscillating apparatus, exposure apparatus, and device fabrication method

In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots ( ) are formed at a predetermined pitch in a long end face (H plane) of each waveguide ( ) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

Laser oscillating apparatus with slotted waveguide

A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube ( ) by introducing electromagnetic waves into the laser tube through a plurality of slots ( ) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode ( ) is placed near the slot ( ). By giving a predetermined current density to the electrode ( ), the intensity distribution of light generated from the laser gas above the slot ( ) is controlled.

Laser oscillating apparatus

In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

Treating method and apparatus utilizing chemical reaction

A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

Growing community of inventors

Sendai, Japan

Toshikuni Shinohara