Toyota Jidosha Kabushiki Kaisha

Hamamatsu-photonics K.k.

Denso Corporation

National University Corporation Tokai National Higher Education and Research System

Mirise Technologies Corporation

Tokai National Higher Education and Research System

Toshiki Yui

Daisuke Kawaguchi

Chiaki Sasaoka

Shuhei Ogura

Atsushi Kawakita

Masatake Nagaya

Shoichi Onda

Jun Kojima

Hiroshi Amano

Yasunori Igasaki

Ryuji Sugiura

Atsushi Tanaka

Keisuke Hara

Kazukuni Hara

Yotaro Wani

Shosuke Nakabayashi

Tomomi Aratani

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.

Laser processing method, semiconductor member manufacturing method, and laser processing device

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

Manufacturing method of semiconductor device

A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

Semiconductor chip and method for manufacturing the same

A laser welding apparatus generates laser by a laser oscillator, converges the laser by a condenser lens, and applies the laser to an upper sheet and a lower sheet superposed together so as to weld the upper sheet and the lower sheet to each other. According to this apparatus, by laser irradiation, a melt pool Y is formed in the upper sheet and the lower sheet superposed together. Furthermore, by laser irradiation, the melt pool Y is caused to flow, and the upper sheet and the lower sheet are welded together.

Laser welding apparatus and laser welding method

Growing community of inventors

Hamamatsu, Japan

Toshiki Yui