Toyoda Gosei Co., Ltd.

Meijo University

Toshiki Yasuda

Isamu Akasaki

Tetsuya Takeuchi

Motoaki Iwaya

Satoshi Kamiyama

Kazuyoshi Iida

Hisanori Kojima

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Group III nitride semiconductor light-emitting device and production method therefor

Growing community of inventors

Nagoya, Japan

Toshiki Yasuda