Sony Semiconductor Solutions Corporation

Mitsumi Electric Company Ltd.

Toshiki Sakamoto

Daisuke Suzuki

Gentaro Kurokawa

Pixel formation in an imaging element configured to detect image plane phase difference is simplified. The imaging element includes an on-chip lens, a plurality of photoelectric conversion portions, and a plurality of waveguides. The on-chip lens concentrates incident light on a pixel and is placed on each pixel so as to be shifted from a center of the pixel according to an incident angle of the incident light. The plurality of photoelectric conversion portions is arranged in the pixel and performs photoelectric conversion according to the incident light. The plurality of waveguides is arranged for the plurality of respective photoelectric conversion portion in the pixel. The plurality of waveguides guide the incident light concentrated so that the incident light enters each of the plurality of photoelectric conversion portion, and are formed into shapes dissimilar to each other based on the shift of the on-chip lens.

Imaging element and imaging device for image plane phase difference detection

A charge circuit includes a current limiting circuit configured to limit a current input from an input terminal; a first transistor connected between an output terminal of the current limiting circuit and a secondary battery; a charge control circuit configured to turn the first transistor on and off to start and stop supply of a charge current to the secondary battery; a second transistor configured to output a current proportional to the charge current flowing through the first transistor; and a charge timer configured to generate clock pulses according to the current output from the second transistor. The charge control circuit is configured to turn off the first transistor to stop the supply of the charge current to the secondary battery when the number of the clock pulses reaches a predetermined number.

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Tokyo, Japan

Toshiki Sakamoto