Seiko Epson Corporation

Kabushiki Kaisha Toshiba

Toshiki Nakajima

Kunihiro Miyazaki

Hiroyuki Matsuo

Hiroshi Kiguchi

Satoru Miyashita

Fumiaki Matsushima

Yoshihiro Ohno

Kuniyasu Matsui

Shigeyuki Ogino

Taeko Nakano

Tsuyoshi Sunagawa

A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NHOH and HF wherein the relationships 0.30&#x2266;X/Y&#x2266;0.78 and 0.03&#x2266;Y&#x2266;6.0 are satisfied, where X represents a concentration [mol/L] of NHOH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from HO. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.

Semiconductor substrate treating method, semiconductor component and electronic appliance

A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

Method of manufacturing a semiconductor device, and a semiconductor substrate

An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiOas a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiOby the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus

A color filter for a liquid crystal display device comprises an optically transparent substrate, a transparent conductive layer formed on the substrate, and a color layer formed on the transparent conductive layer with red, green and blue pixels arranged in a predetermined pattern. The color layer comprises pigments for coloring purpose and transparent conductive particles having a hydrophobic surface. The transparent conductive particles are included from 5% to 50% by volume of the color layer. The color layer may preferably have a specific resistivity of from 10.sup.-1 .OMEGA..multidot.cm to 10.sup.8 .OMEGA..multidot.cm. The transparent conductive particles comprise base transparent conductive particles having a hydrophobic compound bound on their surface by coupling or graft polymerization. A typical process of the color filter production comprises the steps of: (a) forming the transparent conductive layer of a predetermined pattern on the transparent substrate, (b) preparing a micelle colloid dispersion by dispersing a pigment and transparent conductive particles having hydrophobic surface in a medium containing a redox reactive surfactant and an electrolyte, and (c) carrying out an electrolysis in the micelle colloid dispersion by utilizing the transparent conductive layer on the transparent substrate for the anode to deposit the color layer comprising the pigment and the transparent conductive particles on the transparent conductive layer.

Color filter for liquid crystal display device and method for producing

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Suwa, Japan

Toshiki Nakajima