Iwatani Corporation

Hamamatsu-photonics K.k.

Toshiki Manabe

Takeshi Sakamoto

Takafumi Ogiwara

Koichi Izumi

Takehiko Senoo

Tadashi Shojo

Kunihiko Koike

Yu Yoshino

Manabu Saeda

A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, cutting the workpiece along an intended cut line. In the cutting the workpiece, a dry etching process is performed from a front surface toward a rear surface of the workpiece while the workpiece is fixed on a support member at least under its own weight or by suction, to form a groove from the front surface to reach the rear surface of the workpiece.

Cutting method of workpiece by forming reformed region and dry etching process

A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.

Cutting method

Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClFin a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage () and a gas discharge passage () to a processing chamber () of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber () and the gas supply passage () among the processing chamber (), the gas supply passage (), and the gas discharge passage (), which are integrally formed, to coat the inner surfaces of at least the processing chamber () and the gas supply passage () with a fluoride film.

Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride

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Tokyo, Japan

Toshiki Manabe