Hitachi, Ltd.

Other

Toshiki Kurosu

Kinya Nakatsu

Mutsuhiro Mori

Ryuichi Saito

Toshiya Satoh

Kenichi Onda

Yasuo Matsuda

Norikazu Tokunaga

Naoki Sakurai

Michiaki Hiyoshi

Shin Kimura

Katsunori Azuma

Yasumichi Yasuda

Tomoyuki Tanaka

Shigeru Sugayama

Portion of power module for power inverter

In order to provide a highly accurate and reliable temperature sensing circuit and method, a resistor (,) having a positive temperature coefficient is connected between the gate terminal (,) and the insulated gate electrode (,) of the voltage drive type semiconductor device (,), and the temperature is sensed based on a voltage representing a voltage drop across the resistor in a circuit portion between the gate terminal (,) and the other terminal (,).

Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same

In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.

Parallel circuit module including a diode and an IGBT

Growing community of inventors

Hitachi, Japan

Toshiki Kurosu