Seiko Epson Corporation

Toshiki Hara

Jiro Kato

Koichi Morozumi

Satoshi Denda

Kei Kanemoto

Ichiro Asaoka

Masayuki Omoto

Hiromu Miyazawa

Teruo Takizawa

Toshihiro Shimizu

Takayuki Yonemura

Juri Kato

Hiroaki Tamura

Akira Kuriki

Provided is a liquid ejecting head that ejects a liquid in a pressure chamber by a piezoelectric device, the piezoelectric device including a vibration plate, a piezoelectric layer containing lead, a first electrode provided between the vibration plate and the piezoelectric layer, and a second electrode provided on a side opposite to a side of the first electrode as viewed from the piezoelectric layer. The piezoelectric layer is preferentially oriented in a (100) plane, a lattice constant c defined by a crystal plane of the piezoelectric layer parallel to a film surface of the piezoelectric layer and a lattice constant a defined by a crystal plane perpendicular to the film surface satisfy 0.9945&#x2264;c/a&#x2264;1.012, and the thickness of the piezoelectric device is twice or more the thickness t (t&#x3c;5 &#x3bc;m) of the piezoelectric layer.

Liquid ejecting head, liquid ejecting apparatus, and piezoelectric device

A method for evaluating a piezoelectric film containing a perovskite oxide containing a lead atom, a zirconium atom, and a titanium atom, and the method includes a process of irradiating the piezoelectric film with X-rays to acquire an extended X-ray absorption fine structure (EXAFS) spectrum at the L3 absorption edge of the lead atom, a process of Fourier-transforming the extended X-ray absorption fine structure (EXAFS) spectrum to acquire a radial distribution function, and a process of acquiring the intensity of a first peak having a distance from the lead atom of 1.4&#xb1;0.2 &#x212b;, the intensity of a second peak having a distance from the lead atom of 2.0&#xb1;0.2 &#x212b;, and the intensity of a third peak having a distance from the lead atom of 2.6&#xb1;0.2 &#x212b; from the radial distribution function, and then evaluating the film quality of the piezoelectric film from a value obtained by dividing the intensity of the first peak by the intensity of the second peak and a value obtained by dividing the intensity of the first peak by the intensity of the third peak.

Method for evaluating piezoelectric film, piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A thermoelectric conversion element includes a first electrode on provided a substrate; a pyroelectric film that is provided on the first electrode, is formed of a composite oxide having an ABO-type perovskite structure, and generates a surface charge due to temperature change; and a second electrode provided on the pyroelectric film, in which the composite oxide which forms at least a portion of layer in the pyroelectric film contains at least Pb, Nb, and Ti, and is formed of tetragonal crystal which is oriented in the direction of {100} on the substrate.

Thermoelectric conversion element and pyroelectric sensor

A piezoelectric element includes a first conductive layer, a piezoelectric layer, and a second conductive layer. The piezoelectric layer is composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen, and the compound oxide has a perovskite crystal structure. The piezoelectric layer has a thermally stimulated current having at least two peaks including a low temperature-side peak and a high temperature-side peak, and the magnitude of the low temperature-side peak is 1/30 or less of that of the high temperature-side peak.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A piezoelectric element includes a first conductive layer, a second conductive layer disposed to face the first conductive layer, and a piezoelectric layer disposed between the first conductive layer and the second conductive layer and composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a lead concentration gradient region in which the lead concentration increases from the first conductive layer side to the second conductive layer side. The lead concentration gradient region is disposed on the first conductive layer side of the piezoelectric layer.

A piezoelectric element includes a first conductive layer, a second conductive layer facing the first conductive layer, and a piezoelectric layer between the first and second conductive layers, composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a first crystal layer on the first conductive layer side of the piezoelectric layer and a second crystal layer continued from the first crystal layer, nearer to the second conductive layer side than the first crystal layer. In the piezoelectric layer, the lead concentration in the first conductive layer side of the first crystal layer is lower than that in the second conductive layer side of the second crystal layer. In the piezoelectric layer, the oxygen concentration in the first conductive layer side of the first crystal layer is higher than that in the second conductive layer side of the second crystal layer.

Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus

A piezoelectric element comprising a first electrode, a piezoelectric layer which is composed of a metal oxide containing lead, zirconium and titanium and which formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer has negatively charged Pb&#x2014;O complex defects and positively charged Pb&#x2014;O complex defects, the concentration of the negatively charged Pb&#x2014;O complex defects being higher than the concentration of the positively charged Pb&#x2014;O complex defects.

Liquid ejecting head and liquid ejecting apparatus

A method of manufacturing a wiring substrate includes the steps of bonding a first substrate, which includes a pixel area and a drive area located around the pixel area, and is provided with a protruding section formed in the pixel area, to a second substrate on which a peripheral circuit is disposed, so that the peripheral circuit faces the drive area, and separating the second substrate from the first substrate while leaving the peripheral circuit on the first substrate. In the step of bonding the first and the second substrates, the peripheral circuit is pressure-bonded to the first substrate, and the protruding section is made abut on the second substrate in the pixel area.

Wiring substrate, method of manufacturing wiring substrate, and electronic apparatus

A method for manufacturing a semiconductor apparatus, the method including: aligning, on a temporal substrate, the plurality of device chips approximately in an L-shape, a plurality of groups of device chips, each group of device chips including a plurality of device chips aligned in an L-shape; arranging the plurality of groups of the device chips in a plurality of arrays on the temporal substrate, each array of device chips arranged in a band-shape, from a first long side to a second long side of the temporal substrate, a front of the band-shape being a corner of a perimeter of each group; delaminating a group of the device chips as one unit from the temporal substrate, and transferring onto the surface of the flexible substrate; and coupling each of the device chips in the group of device chips with the circuit on the flexible substrate.

Semiconductor device, electro-optical device, and method for manufacturing semiconductor device

A wiring substrate comprises: a flexible substrate having a first region and a second region; a wiring line formed on the flexible substrate; and an electronic element that is disposed on the flexible substrate in the first region and electrically coupled to the wiring line. Flexibility of the first region is lower than flexibility of the second region.

Method for manufacturing a wiring substrate

A method for manufacturing a semiconductor substrate, includes: forming a first semiconductor layer on a semiconductor base material; forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having an etching selectivity larger than that of the first semiconductor layer; forming, at the second semiconductor layer and the first semiconductor layer in the vicinity of an element region, at least three or more hole portions for exposing the semiconductor base material; forming, on the semiconductor base material, a supporting body for supporting the second semiconductor layer on the semiconductor base material so that the hole portions are filled and the second semiconductor layer is covered; etching the supporting body at regions other than predetermined regions including the hole portions and the element region to form an aperture plane in the supporting body, the aperture plane exposes a part of an end section of the first semiconductor layer; etching the first semiconductor layer via the aperture plane to form a hollow section between the second semiconductor layer of the element region and the semiconductor base material; and forming an insulation film in the hollow section. The hole portions are formed so that at least two or more the hole portions are formed in one direction of the element region and at least one or more the hole(s) is/are formed in the other direction crossing the one direction of the element region.

Method for manufacturing semiconductor substrate and method for manufacturing semiconductor apparatus and photomask

A semiconductor substrate includes a semiconductor base substrate that has an oxide film selectively formed on a part thereof, the oxide film having a non-uniform thickness; and a semiconductor layer that is formed on the oxide film by epitaxial growth so as to have a non-uniform thickness.

Method of manufacturing semiconductor substrates and semiconductor devices

A semiconductor is manufactured by forming a &#x3b3;-aluminum oxide layer on a semiconductor substrate, forming a semiconductor layer on the &#x3b3;-aluminum oxide layer, forming an exposed portion for exposing a part of the &#x3b3;-aluminum oxide layer through the semiconductor layer, forming a support which is formed of a material having an etching rate smaller than that of the &#x3b3;-aluminum oxide layer and which supports the semiconductor layer on the semiconductor substrate, forming a cavity between the semiconductor substrate and the semiconductor layer, forming a buried insulating layer in the cavity, forming a gate electrode on the semiconductor layer with a gate insulating layer therebetween and forming source/drain layers, which are disposed on both sides of the gate electrode, in the semiconductor layer.

Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device

A semiconductor device, comprises: a transistor having structured to include a gate electrode formed on a semiconductor layer on a semiconductor substrate via a gate insulating film, and a source layer and a drain layer formed on the semiconductor layer sandwiching the gate electrode; a hollow portion existing between the source layer and the semiconductor substrate, and between the drain layer and the semiconductor substrate, respectively; and the hollow portion in absence between the semiconductor layer under the gate electrode and the semiconductor substrate.

Semiconductor device and method for manufacturing the same

Manufacturing a semiconductor device by removing the insulation film in an alignment mark-forming region, depositing a first semiconductor layer, removing the insulation film on the semiconductor substrate after the second semiconductor layer is formed, forming a first exposing region for exposing the semiconductor substrate through the second semiconductor layer and the first semiconductor layer with reference to the second semiconductor layer in the alignment mark-forming region as a first alignment mark for positioning, while forming, on the semiconductor substrate, a second alignment mark, forming a second exposing region for exposing the first semiconductor layer by using the second alignment mark as a reference for positioning, forming a cavity and forming a buried insulation layer in the cavity, and forming a first grate electrode by using the second alignment mark as a reference for positioning.

Growing community of inventors

Suwa, Japan

Toshiki Hara