Mitsubishi Electric Corporation

Toshiki Fukasawa

Hideki Haruguchi

Tomohito Kudo

A silicon substrate has first to fourth semiconductor regions. The third semiconductor region is separated from the first semiconductor region of a first conductivity type by the second semiconductor region of a second conductivity type. The fourth semiconductor region of the second conductivity type is separated from the second semiconductor region by the third semiconductor region. A first electrode is provided on a first surface. A barrier metal layer is provided on a first portion of a second surface. A second electrode is provided on the second surface, and is separated from the first portion of the second surface by the barrier metal layer. The second electrode includes an aluminum-silicon (Al—Si) layer in contact with a second portion of the second surface, and an Al layer separated from the second portion of the second surface by the Al—Si layer.

Power semiconductor device including a substrate and an electrode having multiple layers with one of the upper layers being in direct contact with a portion of the surface of the substrate

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Tokyo, Japan

Toshiki Fukasawa